Showing results for "Materials Science Forum" 1-12 of 12

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Thermal stability of nanocrystalline grain size in ternary FE-base alloys Materials Science Forum, 753) (pp. 341-344). Koch, C. C., Scattergood, R. O., Kotan, H., & Saber, M. 2013
Thermodynamic stabilization of grain size in nanocrystalline metals Materials Science Forum, 715-716) (pp. 323-328). Koch, C. C., Scattergood, R. O., VanLeeuwen, B. K., & Darling, K. A. 2012
Effect of annealing temperature on texture and creep anisotropy in Ti3Al2.5V alloy Materials Science Forum, 495-497) (pp. 1645-1650). Utikon-Zurich, Switzerland: Trans Tech Publications. Murty, K. L., Kishore, R., Yan, J., Scattergood, R. O., & Helsel, A. W. 2005
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Materials Science Forum, 457-460) (pp. 221-224). Utikon-Zurich, Switzerland: Trans Tech Publications. Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B. P., Reitmeier, Z., Janzen, E., & Davis, R. F. 2004
Effect of c/a-ratio on crystallographic texture and mechanical anisotropy of hexagonal close packed metals Murty, K. L. (2003). Effect of c/a-ratio on crystallographic texture and mechanical anisotropy of hexagonal close packed metals. In Thermec 2003: International Conference on Processing and Manufacturing of Advanced Materials (Materials science forum ; v. 426-432).. (pp. 3575-3580). Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd. Murty, K. L. 2003
Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN Materials Science Forum, 338(3), 1615-1618. Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., Gehrke, T., Davis, R. F., & Krasnobaev, L. Y. 2000
Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition Materials Science Forum, 338(3), 1491-1494. Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. 2000
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Materials Science Forum, 338(3), 1471-1476. Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. 2000
Real-time assessment of over layer removal on 4H-SiC surfaces: Techniques and relevance to contact formation Materials Science Forum, 338(3), 1033-1036. Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., Esser, N., Richter, W., & Aspnes, D. E. 2000
Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001) Materials Science Forum, 338(3), 353-356. Hartman, J. D., Naniwae, K., Petrich, C., Ramachandran, V., Feenstra, R. M., Nemanich, R. J., & Davis, R. F. 2000
Dry etching and metallization schemes in a GaN/SiC heterojunction device process Materials Science Forum, 338(3), 1049-1052. Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., Nam, O. H., & Davis, R. F. 2000
SiC MISFETs with MBE-grown AlN gate dielectric Materials Science Forum, 338(3), 1315-1318. Zetterling, C. M., Ostling, M., Yano, H., Kimoto, T., Matsunami, H., Linthicum, K., & Davis, R. F. 2000

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