Publications

Showing results for "MRS Internet Journal of Nitride Semiconductor Research" 1-25 of 27 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Selective etching of GaN from AlGaN/GaN and AlN/GaN structures MRS Internet Journal of Nitride Semiconductor Research, 9(5). Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. 2004
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere MRS Internet Journal of Nitride Semiconductor Research, 9(2). Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, S., & Sitar, Z. 2004
Effect of implantation temperature on damage accumulation in Ar-implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9-1. Usov, I., Parikh, N., Thomson, D. B., & Davis, R. F. 2002
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1-16. Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., Preble, E. A., Zorman, C. A., Mehregany, M., Schwarz, U., Schuck, J., & Grober, R. 2001
High temperature elastic constant prediction of some group III-nitrides MRS Internet Journal of Nitride Semiconductor Research, 6(3), 1-5. Reeber, R. R., & Wang, K. 2001
Photoluminescence characterization of Mg implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622-U628. Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., & Davis, R. F. 2000
Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46-U57. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. 2000
Zirconium mediated hydrogen outdiffusion from p-GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491-U496. Kaminska, E., Piotrowska, A., Barcz, A., Jasinski, J., Zielinski, M., Golaszewska, K., Davis, R. F., Goldys, E., & Tomsia, K. 2000
Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures MRS Internet Journal of Nitride Semiconductor Research, 5, U520-U525. Michel, A., Hanser, D., Davis, R. F., Qiao, D., Lau, S. S., Yu, L. S., Sun, W., & Asbeck, P. 2000
Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire MRS Internet Journal of Nitride Semiconductor Research, 2000). Sharma, A. K., Jin, C., Narayan, J., Teng, C. W., Muth, J. F., Kolbas, R. M., & Holland, O. W. 2000
Phonon dynamics and lifetimes of AlN and GaN crystallites MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65). Bergman, L., Alexson, D., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., & Davis, R. F. 1999
Crystal structure and defects in nitrogen-deficient GaN MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43). Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Joshkin, V., & Narayan, J. 1999
Study of thin films polarity of group III nitrides MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.46). Dovidenko, K., Oktyabrsky, S., Narayan, J., & Razeghi, M. 1999
Characterization of Be-implanted GaN annealed at high temperatures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. 1999
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., & Davis, R. F. 1999
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9). Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., Mehregany, M., & Davis, R. F. 1999
Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., Aspnes, D. E., & Monemar, B. 1999
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. 1999
Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9). Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., Thomson, D. B., Davis, R. F., & Bremser, M. D. 1999
Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2). Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. 1999
Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37). Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., & Davis, R. F. 1999
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Schetzina, J. F., Haberern, K. W., Kong, H. S., & Edmond, J. S. 1999
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., & Schetzina, J. F. 1999
Thermal residual stress modeling in AlN and GaN multilayer samples MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.18). Wang, K., & Reeber, R. R. 1999
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2). Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. 1999

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