Publications

Showing results for "Journal of Electronic Materials" 1-25 of 60 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Growth and characterization of high-quality, relaxed in (y) Ga1-y N templates for optoelectronic applications Journal of Electronic Materials, 44(11), 4161-4166. Van Den Broeck, D. M., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. 2015
High-performance three-stage cascade thermoelectric devices with 20% efficiency Journal of Electronic Materials, 44(6), 1936-1942. Cook, B. A., Chan, T. E., Dezsi, G., Thomas, P., Koch, C. C., Poon, J., Tritt, T., & Venkatasubramanian, R. 2015
Thermal conductivity of MWNT-epoxy composites by transient thermoreflectance Journal of Electronic Materials, 44(8), 2624-2630. Brown, M., & Jagannadham, K. 2015
Thermal misfit strain relaxation in Ge/(001)Si heterostructures Journal of Electronic Materials, 43(9), 3196-3203. Bharathan, J., Zhou, H. H., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2014
Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials, 43(4), 838-842. Zhou, T. Y., Raghothamachar, B., Wu, F. Z., Dalmau, R., Moody, B., Craft, S., Schlesser, R., Dudley, M., & Sitar, Z. 2014
Biological, electronic, and functional thin films JOM: the Journal of the Minerals, Metals & Materials Society, 66(4), 588-589. Narayan, R. 2014
Thermal conductivity of exfoliated p-type bismuth antimony telluride Journal of Electronic Materials, 43(2), 320-328. Zheng, H., Jagannadham, K., & Youssef, K. 2014
Growth and characterization of InxGa1-xAs/GaAs1-yPy strained-Layer Superlattices with High Values of y (similar to 80%) Journal of Electronic Materials, 42(5), 912-917. Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., & Bedair, S. M. 2013
Poisson ratio of epitaxial germanium films grown on silicon Journal of Electronic Materials, 42(1), 40-46. Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2013
Defect characterization in Ge/(001)Si epitaxial films grown by reduced-pressure chemical vapor deposition Journal of Electronic Materials, 42(10), 2888-2896. Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2013
Fermi level control of point defects during the growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J., Sitar, Z., and Collazo, R. 2013
Fermi level control of point defects during growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J. Q., Sitar, Z., & Collazo, R. 2013
Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO2 thin films Journal of Materials Research, 26(23), 2901-2906. Gupta, A., Singhal, R., Narayan, J., & Avasthi, D. K. 2011
Physical properties of AlGaN/GaN heterostructures grown on vicinal substrates Journal of Electronic Materials, 39(5), 504-516. Grenko, J. A., Reynolds, C. L., Barlage, D. W., Johnson, M. A. L., Lappi, S. E., Ebert, C. W., Preble, E. A., Paskova, T., & Evans, K. R. 2010
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials, 36(4), 414-419. Dalmau, R., Collazo, R., Mita, S., & Sitar, Z. 2007
Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates Journal of Electronic Materials, 36(4), 285-296. Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., Park, M., Molstad, J. C., Barnhardt, D. E., Shrivastava, A., Sudarshan, T. S., & Davis, R. F. 2007
Effects of grain size from millimeters to nanometers on the flow stress of metals and compounds Journal of Electronic Materials, 35(5), 857-861. Conrad, H., & Jung, K. 2006
Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates Journal of Electronic Materials, 35(5), 1104-1111. Adekore, B. T., Rakes, K., Wang, B., Callahan, M. J., Pendurti, S., & Sitar, Z. 2006
Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport Journal of Electronic Materials, 35(7), 1513-1517. Zhuang, D., Herro, Z. G., Schlesser, R., Raghothamachar, B., Dudley, M., & Sitar, Z. 2006
Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) Journal of Electronic Materials, 35(5), 840-845. Chugh, A., Ramachandran, S., Tiwari, A., & Narayan, J. 2006
Co-doped ZnO dilute magnetic semiconductor Journal of Electronic Materials, 35(5), 852-856. Prater, J. T., Ramachandran, S., Tiwari, A., & Narayan, J. 2006
Structural and optical properties of hexagonal MgxZn1-xO thin films Journal of Electronic Materials, 35(5), 869-876. Jin, C. M., & Narayan, R. J. 2006
The formation of epitaxial hexagonal boron nitride on nickel substrates Journal of Electronic Materials, 34(12), 1558-1564. Yang, P. C., Prater, J. T., Liu, W., Glass, J. T., & Davis, R. F. 2005
The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy Journal of Electronic Materials, 34(1), 34-39. Matlock, D. M., Zvanut, M. E., Wang, H. Y., Dimaio, J. R., Davis, R. F., Van Nostrand, J. E., Henry, R. L., Koleske, D., & Wickenden, A. 2005
P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications Journal of Electronic Materials, 34(6), 949-952. Egerton, E. J., Sood, A. K., Singh, R., Puri, Y. R., Davis, R. F., Pierce, J., Look, D. C., & Steiner, T. 2005

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