Showing results for "Journal of Crystal Growth" 1-25 of 71 Next

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Title Journal Year
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth, 438, 81-89. Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. 2016
Influence of high-temperature processing on the surface properties of bulk AlN substrates Journal of Crystal Growth, 446, 33-38. Tojo, S., Yamamoto, R., Tanaka, R., Thieu, Q. T., Togashi, R., Nagashima, T., Kinoshita, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Koukitu, A., Monemar, B., Sitar, Z., & Kumagai, Y. 2016
The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth, 451, 65-71. Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., Tweedie, J., Maria, J. P., Collazo, R., & Sitar, Z. 2016
Optimization of InGaP metamorphic buffers grown by MOVPE Journal of Crystal Growth, 414, 21-26. Ebert, C., Pulwin, Z., Reynolds, C. L., Ramos, F. . S. n., Li, Y., & Farrell, S. 2015
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Journal of Crystal Growth, 394, 55-60. Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., Lucznik, B., Collazo, R., Weyher, J. L., Kucharski, R., Grzegory, I., Bockowski, M., & Sitar, Z. 2014
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Journal of Crystal Growth, 367, 88-93. Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. 2013
Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth, 366, 20-25. Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., Bryan, I., Collazo, R., & Sitar, Z. 2013
Overgrowth of GaN on GaN nanowires produced by mask-less etching Journal of Crystal Growth, 352 1) (pp. 203-208). Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. 2012
The 7th International Workshop on Bulk Nitride Semiconductors Koyasan, Wakayama, Japan 15-20 March 2011 Preface Journal of Crystal Growth, 350(1), 1-1. Freitas, J. A., Sitar, Z., Kumagai, Y., & Meissener, E. 2012
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films Journal of Crystal Growth, 322(1), 27-32. Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. 2011
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society, 158(5), H530-H535. Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. 2011
Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. 2010
Growth of AlN single crystalline boules Journal of Crystal Growth, 312 18) (pp. 2519-2521). Herro, Z. G., Zhuang, D., Schlesser, R., & Sitar, Z. 2010
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Journal of Crystal Growth, 312(7), 902-905. Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., Preble, E. A., & Evans, K. R. 2010
Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces Journal of Crystal Growth, 311(4), 1106-1109. Losego, M. D., Kourkoutis, L. F., Mita, S., Craft, H. S., Muller, D. A., Collazo, R., Sitar, Z., & Maria, J. P. 2009
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth, 311 10) (pp. 3044-3048). Mita, S., Collazo, R., & Sitar, Z. 2009
Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth, 312(1), 58-63. Lu, P., Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., Raghothamachar, B., Dudley, M., & Sitar, Z. 2009
Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0) Journal of Crystal Growth, 311(1), 72-78. Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., Park, J. S., & Davis, R. F. 2008
Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth, 310(1), 51-56. Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J. P. 2008
Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth, 310(10), 2464-2470. Lu, P., Edgar, J. H., Cao, C., Hohn, K., Dalmau, R., Schlesser, R., & Sitar, Z. 2008
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Journal of Crystal Growth, 300(1), 83-89. Bishop, S. M., Park, J. S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2007
Effect of thermal environment evolution on A1N bulk sublimation crystal growth Journal of Crystal Growth, 306(1), 39-46. Cai, D., Zheng, L. L., Zhang, H., Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. 2007
Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route Journal of Crystal Growth, 308(1), 71-79. Adekore, B. T., Callahan, M. J., Bouthillette, L., Dalmau, R., & Sitar, Z. 2007
Influence of trace precursors on mass transport and growth rate during sublimation deposition of AlN crystal Journal of Applied Physics, 100(8). Li, Y. X., & Brenner, D. W. 2006
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Journal of Crystal Growth, 290(2), 504-512. Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2006

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