Publications

Showing results for "Japanese Journal of Applied Physics" 1-17 of 17

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics, 52(4). Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. 2013
Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2 Japanese Journal of Applied Physics, 52(4). Lucovsky, G. 2013
Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates Japanese Journal of Applied Physics, 52(10). Kim, J., Kim, J., Lee, Y. A., & Seo, H. 2013
Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). Lucovsky, G., Miotti, L., & Bastos, K. P. 2011
Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). Lucovsky, G. 2011
Analysis of interface states in LaSixOy metal-insulator-semiconductor structures Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 46(10A), 6480-6488. Inoue, N., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. 2007
Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 45(5A), 4083-4086. Park, J. S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. 2006
Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(10), 7254-7259. Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. 2005
Ferroelectric and colossal magnetoresistive properties of a PbZr1-xTixO3/La1-xSrxMnO3 heterostructure film Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 39(9B), 5418-5420. Mitsugi, F., Yamagata, Y., Ikegami, T., Ebihara, K., Narayan, J., & Grishin, A. M. 2000
Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 38(9B), 5402-5405. Maiwa, H., Christman, J. A., Kim, S. H., Kim, D. J., Maria, J. P., Chen, B., Streiffer, S. K., & Kingon, A. I. 1999
Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(2), 709-714. Koh, K., Niimi, H., Lucovsky, Gerald, & Green, M. L. 1998
Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(9B), 5185-5188. Fujimura, N., Thomas, D. T., Streiffer, S. K., & Kingon, A. I. 1998
A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(3B), 1082-1090. Yang, H., & Lucovsky, G. 1998
Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(3B), 1236-1239. Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. 1998
Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532-L535. Nam, O.-H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. 1997
Local atomic bonding in fluorinated silicon oxides: bond ionicity controlled contributions of infrared active vibrations to the static dielectric constant Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 36(3b), 1368-1373. Lucovsky, G., & Yang, H. 1997
Selected area nucleation and bond strain relaxation in silicon PECVD using time modulated silane flow Japanese Journal of Applied Physics, 31, 1943-1947. Parsons, G.N., Boland, J.J., & Tsang, J.C. 1992

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