Publications

Showing results for "IEEE Transactions on Electron Devices" 1-7 of 7

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Minority carrier transport and their lifetime in InGaAs/GaAsP multiple quantum well structures IEEE Transactions on Electron Devices, 60(8), 2532-2536. Carlin, C. Z., Bradshaw, G. K., Samberg, J. P., Colter, P. C., & Bedair, S. M. 2013
Influence of dopants on the thermal conductance of GaN-sapphire interface IEEE Transactions on Electron Devices, 60(6), 1911-1915. Zheng, H., & Jagannadham, K. 2013
Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties IEEE Transactions on Electron Devices, 58(9), 3106-3115. Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X. Y., & Misra, V. 2011
Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application IEEE Transactions on Electron Devices, 58(9), 2928-2935. Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. 2011
Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor IEEE Transactions on Electron Devices, 49(11), 1969-1978. Fan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. 2002
The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing IEEE Transactions on Electron Devices, 47(7), 1361-1369. Wu, Y., Lucovsky, G., & Lee, Y. M. 2000
Modeled tunnel currents for high dielectric constant dielectrics IEEE Transactions on Electron Devices, 45(6), 1350-1355. Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., Hauser, J. R., & Wortman, J. J. 1998

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