Publications

Showing results for "Devices" 1-25 of 92 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Inherently pre-strained elastomers with self-healing property: New generation of freestanding electroactuators (conference presentation) Proceedings of SPIE-the International Society for Optical Engineering, 10163). Vatankhah-Varnosfaderani, M., Sheyko, S. S., Matyjaszewski, K., Daniel, W. F. M., Li, Q. X., Morgan, B. J., & Spontak, R. J. 2017
Bottlebrush elastomers: A promising molecular engineering route to tunable, prestrain-free dielectric elastomers (conference presentation) Proceedings of SPIE-the International Society for Optical Engineering, 10163). Vatankhah-Varnosfaderani, M., Daniel, W. F. M., Zhushma, A. P., Li, Q. X., Morgan, B. J., Matyjaszewski, K., Armstrong, D. P., Dobrynin, A. V., Sheyko, S. S., & Spontak, R. J. 2017
ZnO wide bandgap semiconductors preparation for optoelectronic devices IOP Conference Series-Materials Science and Engineering, 176). Ramelan, A. H., Wahyuningsih, S., Munawaroh, H., & Narayan, R. 2017
ZnO wide bandgap semiconductors preparation for optoelectronic devices IOP Conference Series-Materials Science and Engineering, 176). Ramelan, A. H., Wahyuningsih, S., Munawaroh, H., & Narayan, R. 2017
Flexible inorganic ferroelectric thin films for nonvolatile memory devices Advanced Functional Materials, 27(21). Yu, H., Chung, C. C., Shewmon, N., Ho, S., Carpenter, J. H., Larrabee, R., Sun, T. L., Jones, J. L., Ade, H., O'Connor, B. T., & So, F. 2017
Strain engineered high reflectivity DBRs in the deep UV Proceedings of SPIE-the International Society for Optical Engineering, 9748). Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., Bobea, M., Tweedie, J., Kirste, R., Gerhold, M., Collazo, R., & Sitar, Z. 2016
On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates ECS Transactions, 72 5) (pp. 31-40). Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., Kumagai, Y., Hoffmann, A., Irving, D. L., Sitar, Z., & Collazo, R. 2016
Impact of field cycling on HfO2 based non-volatile memory devices Proceedings of the European Solid-State Device Research Conference, ) (pp. 364-368). Schroeder, U., Pesic, M., Schenk, T., Mulaosmanovic, H., Slesazeck, S., Ocker, J., Richter, C., Yurchuk, E., Khullar, K., Muller, J., Polakowski, P., Grimley, E. D., LeBeau, J. M., Flachowsky, S., Jansen, S., Kolodinski, S., & van Bentum, R. 2016
Humidity sensor based on perfect metamaterial absorber Devices, ) (pp. 37-38). Ni, B., Wang, Z. Y., Zhao, R. S., Ma, X. Y., Xing, Z. Q., Yang, L. S., Huang, L. J., Lin, Y. Y., & Zhang, D. B. 2016
High-performance three-stage cascade thermoelectric devices with 20% efficiency Journal of Electronic Materials, 44(6), 1936-1942. Cook, B. A., Chan, T. E., Dezsi, G., Thomas, P., Koch, C. C., Poon, J., Tritt, T., & Venkatasubramanian, R. 2015
AlGaN devices and growth of device structures Journal of Materials Science, 50(9), 3267-3307. Jones, K. A., Chow, T. P., Wraback, M., Shatalov, M., Sitar, Z., Shahedipour, F., Udwary, K., Tompa, G. S. 2015
Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices Surface & Coatings Technology, 242, 183-186. Lucovsky, G., Zeller, D. J., Cheng, C., & Zhang, Y. 2014
Point defect management in GaN by Fermi-level control during growth Proceedings of SPIE-the International Society for Optical Engineering, 8986). Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Sitar, Z., & Collazo, R. 2014
Effects of environmental exposure on stability and conductance poly-l-lysine coated AlGaN/GaN high electron mobility transistors ECS Transactions, 61 4) (pp. 147-151). Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. 2014
Dry-processable carbon nanotubes for functional devices and composites Small (Weinheim An Der Bergstrasse, Germany), 10(22), 4606-4625. Di, J. T., Wang, X., Xing, Y. J., Zhang, Y. Y., Zhang, X. H., Lu, W. B., Li, Q. W., & Zhu, Y. T. T. 2014
Texture analysis of thick bismuth ferrite lead titanate layers 2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM), ) (pp. 166-168). Palizdar, M., Mallick, D., Maity, T., Roy, S., Comyn, T. P., Stevenson, T. J., Fancher, C. M., Jones, J. L., Poterala, S. F., Messing, G. L., Suvaci, E., Kleppe, A. P., Jehcoat, A. J., & Bell, A. J. 2014
Minority carrier transport and their lifetime in InGaAs/GaAsP multiple quantum well structures IEEE Transactions on Electron Devices, 60(8), 2532-2536. Carlin, C. Z., Bradshaw, G. K., Samberg, J. P., Colter, P. C., & Bedair, S. M. 2013
Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of SPIE-the International Society for Optical Engineering, 8631). Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., Mita, S., Collazo, R., & Sitar, Z. 2013
Influence of dopants on the thermal conductance of GaN-sapphire interface IEEE Transactions on Electron Devices, 60(6), 1911-1915. Zheng, H., & Jagannadham, K. 2013
Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices Physica Status Solidi. A, Applications and Materials Science, 208(12), 2884-2888. Colter, P. C., Carlin, C. Z., Samberg, J. P., Bradshaw, G. K., & Bedair, S. M. 2011
Radiation effects in new materials for nano-devices (invited) Microelectronic Engineering, 88 7) (pp. 1259-1264). Schrimpf, R. D., Fleetwood, D. M., Alles, M. L., Reed, R. A., Lucovsky, G., & Pantelides, S. T. 2011
Improving biocompatibily of laser micromachined silicon wafer by surface coating with poly(ethylene glycol) diacrylate and diamond-like carbon for biomedical devices Proceedings of the ASME International Manufacturing Science and Engineering Conference 2010, vol 2, ) (pp. 273-280). Wongwiwat, P., Narayan, R. J., & Lee, Y. S. 2011
Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties IEEE Transactions on Electron Devices, 58(9), 3106-3115. Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X. Y., & Misra, V. 2011
Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application IEEE Transactions on Electron Devices, 58(9), 2928-2935. Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. 2011
Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion Materials Research Society Symposium Proceedings, 1183) (pp. 45-50). Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., Bedair, S. M., & El Masry, N. A. 2010

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