Publications

Showing results for "Chemical Vapor Deposition" 1-25 of 81 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies Journal of Applied Physics, 119(14). Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., Alden, D., Franke, A., Sarkar, B., Kohn, E., Collazo, R., & Sitar, Z. 2016
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics, 120(10). Kaess, F., Mita, S., Xie, J. Q., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., Washiyama, S., Franke, A., Kirste, R., Hoffmann, A., Collazo, R., & Sitar, Z. 2016
Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition Journal of Applied Physics, 117(6). Kumar, R., Brom, J. E., Redwing, J. M., & Hunte, F. 2015
Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics, 116(13). Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. 2014
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters, 105(22). Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., Guo, W., Hoffmann, M., Kirste, R., Tweedie, J., Gerhold, M., Irving, D. L., Sitar, Z., & Collazo, R. 2014
Inversion by metalorganic chemical vapor deposition from N-to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes Applied Physics Letters, 103(23). Hosalli, A. M., Van Den Broeck, D. M., Bharrat, D., El-Masry, N. A., & Bedair, S. M. 2013
Defect characterization in Ge/(001)Si epitaxial films grown by reduced-pressure chemical vapor deposition Journal of Electronic Materials, 42(10), 2888-2896. Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2013
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters, 102(6). Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., Xie, J., Kirste, R., Collazo, R., & Sitar, Z. 2013
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters, 102(22). Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., Sitar, Z., Mita, S., & Gerhold, M. 2013
Low-temperature atomic layer deposition of tungsten using tungsten hexafluoride and highly-diluted silane in argon Chemical Vapor Deposition, 19(4-6), 161-166. Kalanyan, B., Losego, M. D., Oldham, C. J., & Parsons, G. N. 2013
Influence of subsurface hybrid material growth on the mechanical properties of atomic layer deposited thin films on polymers Chemical Vapor Deposition, 19(4-6), 134-141. Sun, Y. J., Padbury, R. P., Akyildiz, H. I., Goertz, M. P., Palmer, J. A., & Jur, J. S. 2013
Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics, 112(11). Hussey, L., Mita, S., Xie, J. Q., Guo, W., Akouala, C. R., Rajan, J., Bryan, I., Collazo, R., & Sitar, Z. 2012
Making inert polypropylene fibers chemically responsive by combining atomic layer deposition and vapor phase chemical grafting Nanotechnology, 22(15). Peng, Q., Gong, B., & Parsons, G. N. 2011
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics, 110(9). Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Sitar, Z., & Hoffmann, A. 2011
Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition Journal of Applied Physics, 110(8). Gupta, S., Zaidi, T., Melton, A., Malguth, E., Yu, H. B., Liu, Z. Q., Liu, X. T., Schwartz, J., & Ferguson, I. T. 2011
Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(4), 583-589. Liu, X., & Aspnes, D. E. 2010
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics, 108(4). Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. 2010
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth, 311 10) (pp. 3044-3048). Mita, S., Collazo, R., & Sitar, Z. 2009
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP Applied Physics Letters, 93(20). Liu, X., & Aspnes, D. E. 2008
Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0) Journal of Crystal Growth, 311(1), 72-78. Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., Park, J. S., & Davis, R. F. 2008
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters, 92(4). Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., Mita, S., & Sitar, Z. 2008
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics, 104(1). Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. 2008
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters, 93(2). Kim, H. J., Choi, S., Yoo, D., Ryou, J. H., Dupuis, R. D., Dalmau, R. F., Lu, P., & Sitar, Z. 2008
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer Patent:
Basceri, C., & Alzola, N. (2007). Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer. U.S. Patent No. 7,208,198. Washington, DC: U.S. Patent and Trademark Office. Basceri, C., & Alzola, N.
2007
Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer Patent:
Basceri, C., Vasilyeva, I., Derraa, A., Campbell, P. H., & Sandhu, G. S. (2006). Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer. U.S. Patent No. 7,033,642. Washington, DC: U.S. Patent and Trademark Office. Basceri, C., Vasilyeva, I., Derraa, A., Campbell, P. H., & Sandhu, G. S.
2006

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