Publications

Showing results for "Chemical Physics Letters" 1-25 of 27 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters, 106(8). Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., Tweedie, J., Collazo, R., Sitar, Z. 2015
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters, 105(22). Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., Guo, W., Hoffmann, M., Kirste, R., Tweedie, J., Gerhold, M., Irving, D. L., Sitar, Z., & Collazo, R. 2014
Inversion by metalorganic chemical vapor deposition from N-to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes Applied Physics Letters, 103(23). Hosalli, A. M., Van Den Broeck, D. M., Bharrat, D., El-Masry, N. A., & Bedair, S. M. 2013
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters, 102(6). Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., Xie, J., Kirste, R., Collazo, R., & Sitar, Z. 2013
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters, 102(22). Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., Sitar, Z., Mita, S., & Gerhold, M. 2013
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters, 98(8). Craft, H. S., Rice, A. L., Collazo, R., Sitar, Z., & Maria, J. P. 2011
Micro-fluidic channels on nanopatterned substrates: Monitoring protein binding to lipid bilayers with surface-enhanced Raman spectroscopy Chemical Physics Letters, 489(1-3), 121-126. Banerjee, A., Perez-Castillejos, R., Hahn, D., Smirnov, A. I., & Grebel, H. 2010
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP Applied Physics Letters, 93(20). Liu, X., & Aspnes, D. E. 2008
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters, 92(4). Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., Mita, S., & Sitar, Z. 2008
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters, 93(2). Kim, H. J., Choi, S., Yoo, D., Ryou, J. H., Dupuis, R. D., Dalmau, R. F., Lu, P., & Sitar, Z. 2008
Chemical composition changes across the interface of amorphous LaScO3 on Si (001) Applied Physics Letters, 91(15). Liu, F., & Duscher, G. 2007
Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil Applied Physics Letters, 88(26). Kim, T., Hanson, J. N., Gruverman, A., Kingon, A. I., & Streiffer, S. K. 2006
Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition Applied Physics Letters, 85(13), 2601-2603. Wang, Y. Y., Gupta, S., & Nemanich, R. J. 2004
Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08) Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., Leboeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., Leboeuf, S. F., & Bedair, S. M. 2002
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition Applied Physics Letters, 78(8), 1062-1064. Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. 2001
Hydrogen Raman shifts in carbon nanotubes from molecular dynamics simulation Chemical Physics Letters, 334(1-3), 18-23. Frankland, S. J. V., & Brenner, D. W. 2001
Thickness effects on imprint in chemical-solution-derived (Pb,La)(Zr, Ti)O-3 thin films Applied Physics Letters, 78(19), 2885-2887. Kim, S. H., Woo, H. J., Ha, J., Hwang, C. S., Kim, H. R., & Kingon, A. I. 2001
Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices Applied Physics Letters, 79(7), 973-975. Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. 2001
Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition Applied Physics Letters, 75(15), 2202-2204. Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. 1999
High optical quality AlInGaN by metalorganic chemical vapor deposition Applied Physics Letters, 75(21), 3315-3317. Aumer, M. E., Leboeuf, S. F., McIntosh, F. G., & Bedair, S. M. 1999
Accommodation of nonstoichiometry in (100) fiber-textured (BaxSr1-x)Ti1-yO3+z thin films grown by chemical vapor deposition Applied Physics Letters, 74(17), 2432-2434. Stemmer, S., Streiffer, S. K., Browning, N. D., & Kingon, A. I. 1999
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2o3 thin films on Si(100) Applied Physics Letters, 75(25), 4001-4003. Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., Hegde, R. I., Baumvol, I. J. R., & Parsons, G. N. 1999
Phase separation in InGaN grown by metalorganic chemical vapor deposition Applied Physics Letters, 72(1), 40-42. ElMasry, N. A., Piner, E. L., Liu, S. X., & Bedair, S. M. 1998
Shock-induced chemical reactions in a Ni/Al powder mixture Applied Physics Letters, 70(25), 3365-3367. Yang, Y., Gould, R. D., Horie, Y., & Iyer, K. R. 1997
Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications Applied Physics Letters, 71(23), 3388-3390. Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., Christensen, K., & Maher, D. M. 1997

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