Publications

Showing results for "Applied Physics Express" 1-8 of 8

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment Applied Physics Express, 10(7). Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. 2017
Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express, 8(4). Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., Gerhold, M. D., Collazo, R., Sitar, Z., & Zgonik, M. 2015
Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy Applied Physics Express, 8(6). Kinoshita, T., Nagashima, T., Obata, T., Takashima, S., Yamamoto, R., Togashi, R., Kumagai, Y., Schlesser, R., Collazo, R., Koukitu, A., & Sitar, Z. 2015
Preparation of free-standing GaN substrates from thick GaN layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds Applied Physics Express, 6(7). Sochacki, T., Bryan, Z., Amilusik, M., Collazo, R., Lucznik, B., Weyher, J. L., Nowak, G., Sadovyi, B., Kamler, G., Kucharski, R., Zajac, M., Doradzinski, R., Dwilinski, R., Grzegory, I., Bockowski, M., & Sitar, Z. 2013
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy Applied Physics Express, 6(9). Kinoshita, T., Obata, T., Nagashima, T., Yanagi, H., Moody, B., Mita, S., Inoue, S., Kumagai, Y., Koukitu, A., & Sitar, Z. 2013
Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport Applied Physics Express, 5(5). Kumagai, Y., Kubota, Y., Nagashima, T., Kinoshita, T., Dalmau, R., Schlesser, R., Moody, B., Xie, J. Q., Murakami, H., Koukitu, A., & Sitar, Z. 2012
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy Applied Physics Express, 5(12). Kinoshita, T., Hironaka, K., Obata, T., Nagashima, T., Dalmau, R., Schlesser, R., Moody, B., Xie, J. Q., Inoue, S., Kumagai, Y., Koukitu, A., & Sitar, Z. 2012
Structural and optical properties of carbon-doped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport Applied Physics Express, 5(12). Nagashima, T., Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J. Q., Collazo, R., Murakami, H., Okamoto, H., Koukitu, A., & Sitar, Z. 2012

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