Showing results for "1999" 1-25 of 227 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Near-infrared optical extinction of indium tin oxide structures prepared by nanosphere lithography ACS Photonics, 3(10), 1993-1999. Kang, M. S., Losego, M., Sachet, E., Maria, J. P., & Franzen, S. 2016
Nonequilibrium processing of polymeric materials by mechanical attrition Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. (2000). Nonequilibrium processing of polymeric materials by mechanical attrition. In J. Eckert, H. Schlorb, & L. Schultz (Eds.), International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials (1999: Dresden, Germany). (pp. 49-56 pt.1). Utikon-Zurich, Switz.; Enfield, NH: Trans Tech Publications. Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. 2000
Discrete element modeling of shock compression of hexagonal boron nitride powder with and without copper addition Journal of Materials Processing Technology, 85(1-3), 109-114. Horie, Y., & Yano, K. 1999
Stimulated emission in GaN thin films in the temperature range of 300-700 K Journal of Applied Physics, 85(3), 1792-1795. Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Yang, W., Perry, W. G., Bremser, M. D., & Davis, R. F. 1999
Thermophysical properties of alpha-tungsten carbide Journal of the American Ceramic Society, 82(1), 129-135. Reeber, R. R., & Wang, K. 1999
Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(1), 108-112. Klein, T. M., Anderson, T. M., Chowdhury, A. I., & Parsons, G. N. 1999
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers Applied Physics Letters, 74(7), 985-987. Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., & Tsong, I. S. T. 1999
Imaging micro-cracks in gold films: a comparative study of scanning tunneling and atomic force microscopies Ultramicroscopy, 76(1-2), 61-67. Neves, B. R. A., Vilela, J. M. C., Russell, P. E., Reis, A. C. C., & Andrade, M. S. 1999
Studies of hydrogen-induced degradation processes in SrBi(2)Ta(2)O(9) ferroelectric film-based capacitors Applied Physics Letters, 74(8), 1162-1164. Im, J., Auciello, O., Krauss, A. R., Gruen, D. M., Chang, R. P. H., Kim, S. H., & Kingon, A. I. 1999
The influences of reactant composition and substrate material on the combustion synthesis of diamond Journal of Materials Research, 14(1), 259-269. Wolden, C. A., Draper, C. E., Sitar, Z., & Prater, J. T. 1999
Simulation of metallic impurity gettering in silicon by MeV ion implantation Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322-328. Brown, R. A., Kononchuk, O., & Rozgonyi, G. A. 1999
Mechanical properties of nanotubule fibers and composites determined from theoretical calculations and simulations (vol 36, pg 1, 1998) Carbon, 37(2), 347. Sinnott, S. B., Shenderova, O. A., White, C. T., & Brenner, D. W. 1999
Evolution of deep-level centers in p-type silicon following ion implantation at 85 K Applied Physics Letters, 74(9), 1263-1265. Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. 1999
Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte Journal of Applied Electrochemistry, 29(1), 75-80. Roberson, S. L., Finello, D., & Davis, R. F. 1999
Silver-hydrogen interactions in crystalline silicon Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551-5560. Yarykin, N., Sachse, J. U., Lemke, H., & Weber, J. 1999
Room temperature growth of cubic boron nitride Applied Physics Letters, 74(11), 1552-1554. Feldermann, H., Merk, R., Hofsass, H., Ronning, C., & Zheleva, T. 1999
Characterization of silica-supported Pd-Au clusters by X-ray absorption spectroscopy Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, 103(2), 321-329. Reifsnyder, S. N., & Lamb, H. H. 1999
Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites Composites. Part A, Applied Science and Manufacturing, 30(4), 463-470. More, K. L., Ailey, K. S., Lowden, R. A., & Lin, H. T. 1999
Photon-induced localization in optically absorbing materials Physics Letters. A, 253(1-2), 93-97. Mantese, L., Bell, K. A., Aspnes, D. E., & Rossow, U. 1999
Thermal residual stress modeling in AlN and GaN multilayer samples MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.18). Wang, K., & Reeber, R. R. 1999
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials, 28(3), 295-300. Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. 1999
Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society, 146(3), 1147-1150. Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. 1999
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Journal of the Electrochemical Society, 146(3), 1189-1196. Ban, I., & Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. 1999
Effects of oxygen on selective silicon deposition using disilane Materials Letters, 38(6), 418-422. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., & Maher, D. M. 1999
Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics Applied Physics Letters, 74(14), 2005-2007. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. 1999

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