Publications

Showing results for "1999" 1-25 of 227 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Near-infrared optical extinction of indium tin oxide structures prepared by nanosphere lithography ACS Photonics, 3(10), 1993-1999. Kang, M. S., Losego, M., Sachet, E., Maria, J. P., & Franzen, S. 2016
Nonequilibrium processing of polymeric materials by mechanical attrition Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. (2000). Nonequilibrium processing of polymeric materials by mechanical attrition. In J. Eckert, H. Schlorb, & L. Schultz (Eds.), International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials (1999: Dresden, Germany). (pp. 49-56 pt.1). Utikon-Zurich, Switz.; Enfield, NH: Trans Tech Publications. Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. 2000
Photon-induced localization in optically absorbing materials Physics Letters. A, 253(1-2), 93-97. Mantese, L., Bell, K. A., Aspnes, D. E., & Rossow, U. 1999
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials, 28(3), 295-300. Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. 1999
Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics Applied Physics Letters, 74(14), 2005-2007. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. 1999
Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN Journal of Applied Physics, 85(7), 3535-3539. Bergman, L., Dutta, M., Balkas, C., Davis, R. F., Christman, J. A., Alexson, D., & Nemanich, R. J. 1999
Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100) Journal of Applied Physics, 85(7), 3614-3618. Maillard-Schaller, E., Boyanov, B. I., English, S., & Nemanich, R. J. 1999
Confined phonon and phonon-mode properties of III-V nitrides with wurtzite crystal structure Physica. B, Condensed Matter, 263(1999 Mar.), 510-513. Alexson, D., Bergman, L., Dutta, M., Kim, K. W., Komirenko, S., Nemanich, R. J., Lee, B. C., Stroscio, M. A., & Yu, S. G. 1999
Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 632-634. Kang, D. H., Zhirnov, V. V., Wojak, G. J., Preble, E. A., Choi, W. B., Hren, J. J., & Cuomo, J. J. 1999
Raman analysis and field emission study of ion beam etched diamond films Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 700-704. Park, M., McGregor, D. R., Bergman, L., Nemanich, R. J., Hren, J. J., Cuomo, J. J., Choi, W. B., & Zhirnov, V. V. 1999
Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 734-739. Park, M., Sowers, A. T., Rinne, C. L., Schlesser, R., Bergman, L., Nemanich, R. J., Sitar, Z., Hren, J. J., Cuomo, J. J., Zhirnov, V. V., & Choi, W. B. 1999
Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., Aspnes, D. E., & Monemar, B. 1999
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Schetzina, J. F., Haberern, K. W., Kong, H. S., & Edmond, J. S. 1999
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2). Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. 1999
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., & Schetzina, J. F. 1999
Phonon dynamics and lifetimes of AlN and GaN crystallites MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65). Bergman, L., Alexson, D., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., & Davis, R. F. 1999
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition Journal of Applied Physics, 85(11), 7884-7887. Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., & Narayan, J. 1999
Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces Journal of the Electrochemical Society, 146(5), 1910-1917. King, S. W., Nemanich, R. J., & Davis, R. F. 1999
Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy Applied Surface Science, 146(1-4), 287-294. Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. 1999
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure Physical Review. B, Condensed Matter and Materials Physics, 59(20), 12977-12982. Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., Shin, H., & Davis, R. F. 1999
Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides IEEE Electron Device Letters, 20(6), 262-264. Wu, Y. D., Xiang, Q., Bang, D., Lucovsky, G., & Lin, M. R. 1999
Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy Journal of Applied Physics, 86(1), 281-288. Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., Piner, E. L., & Molnar, R. J. 1999
Hydrogenplasma removal of post-Rie residue for backend processing Journal of the Electrochemical Society, 146(6), 2318-2321. Somashekhar, A., Ying, H., Smith, P. B., Aldrich, D. B., & Nemanich, R. J. 1999
Improvement of gate dielectric reliability for P plus poly Mos devices using remote pecvd top nitride deposition ultra-thin(2.4-6 Nm) gate oxides Microelectronics Reliability, 39(3), 365-372. Wu, Y., & Lucovsky, G. 1999
Cobalt suicide formation on 6H silicon carbide Journal of Synchrotron Radiation, 6(1999 May 1), 188-189. Porto, A. O., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. 1999

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