Zlatko Sitar

Kobe Steel Distinguished Professor

Email: sitar@ncsu.edu
Office: Research Building I 217

Prof. Sitar founded the WideBandgaps research laboratory that is focusing on bulk and thin film growth, characterization, and device development in wide bandgap semiconductors: GaN, AlN, and their alloys. He has pioneered the III-nitride MBE process through the design of a unique ECR plasma source, developed, patented, and commercialized a process for growth of AlN crystals, which is currently the only commercial high-quality AlN crystal growth process in the world (commercialized by HexaTech, Inc.), developed, patented, and commercialized epi-ready wafers and device layer growth processes on AlN wafers, which are the basis for high-efficiency deep-UV lasers and light emitting diodes, invented and patented a process for growth of III-nitride lateral polar structures via MOCVD and proposed and demonstrated novel devices based on this invention, which include lateral p-n diodes, low contact-resistance field effect transistors, quasi phase matched structures for optical frequency doubling, and superjunction-based devices.

Prof. Sitar directs the Materials Research Center at NCSU and holds joint appointments in Physics Department at NCSU and Electrical Engineering at University of Nagoya, Japan. His collaborative network spans all four inhabited continents. Based on his research, he founded HexaTech, Inc., an NCSU spin-out focusing on AlN crystal growth and wafer production and Adroit Materials, Inc., who is focusing on the development of UV light emitting devices on the AlN platform and vertical devices on native GaN substrates.

Publications

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics: Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
High conductivity in Ge-doped AlN achieved by a non-equilibrium process: Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
High p-conductivity in AlGaN enabled by polarization field engineering: Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor: Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023), APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443
The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN: Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022), APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates: Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25), PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323
Doping and compensation in heavily Mg doped Al-rich AlGaN films: Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022), APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions: Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022), JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044
High electron mobility in AlN:Si by point and extended defect management: Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022), JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates: Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10), PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

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