Ramón Collazo
University Faculty Scholar and Professor
- Email: rcollaz@ncsu.edu
- Office: Research Building I 219
- Website: https://www.mse.ncsu.edu/collazo
Ramón Collazo received his BS in Physics from the University of Puerto Rico, San Juan, and has been involved in the growth and characterization of wide bandgap semiconductor thin films, especially nitrides and diamond, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunction along with their application to the first lateral p/n junction. Additionally, he has been involved in the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications. He was awarded the Facundo Bueso Medal for Physics and has authored over 60 publications and given presentations at national and international conferences.
Collazo’s research interests include Optoelectronic/Power Materials and Devices; III-N Wide Bandgap Semiconductors; Polar Materials: Nitrides and Oxides; Optics: Materials Characterization and Nonlinear
Publications
- Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
- Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
- High conductivity and low activation energy in p-type AlGaN
- Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023), Applied Physics Letters. https://doi.org/10.1063/5.0141863
- High conductivity in Ge-doped AlN achieved by a non-equilibrium process
- Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
- High p-conductivity in AlGaN enabled by polarization field engineering
- Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
- Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
- Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023), APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443
- (Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices
- Pavlidis, S., Khachariya, D., Szymanski, D., Reddy, P., Kohn, E., Sitar, Z., & Collazo, R. (2022), ECS Meeting Abstracts. https://doi.org/10.1149/MA2022-01311313mtgabs
- The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
- Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022), APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628
- Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
- Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25), PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323
- Doping and compensation in heavily Mg doped Al-rich AlGaN films
- Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022), APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992
- GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
- Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022), JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044
