Nadia El-Masry

Professor

  • 919-515-2970
  • Engineering Building I (EB1) 3074C

Nadia El-Masry joined the NCSU faculty in 1986 as an Assistant Professor. El-Masry has published in the area of superlattices, pseudomorphic heterostructures, ordering and crystal structure of ternary and quaternary III-V alloys, atomic layer epitaxy (ALE), laser writing of single crystal III-V materials, Laser ablation of oxides and ferromagnetic materials on semiconductor substrates, transition metals doped GaN for spin electronic and memory dvices. Also, she has experience in thin film growth by organometallic chemical vapor deposition (OMCVD), laser chemical vapor deposition (LCVD) techniques, and the characterization of these films by means of transmission electron microscopy (TEM), X-ray diffraction techniques, and magnetotransport measurements.

Dr. El-Masry’s interests include growth and characterization of III-V thin film semiconductor materials and bulk metallic alloys; structural characterization by x-ray and transmission electron microscopy; growth and characterization of magnetic materials.

Education

Ph.D. 1980

Materials Engineering

North Carolina State University

M.S. 1975

Chemical Engineering

Alexandria University, Egypt

B.S. 1972

Chemical Engineering

Alexandria University, Egypt

Publications

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures
El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Liu, Z., & Bedair, S. M. (2017), Applied Physics Letters, 111(8).
Growth and characterization of high-quality, relaxed in (y) Ga1-y N templates for optoelectronic applications
Van Den Broeck, D. M., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. (2015), Journal of Electronic Materials, 44(11), 4161–4166.
Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires
You, G. J., Liu, J., Jiang, Z. Y., Wang, L., El-Masry, N. A., Hosalli, A. M., … Xu, J. (2014), Optics Letters, 39(6), 1501–1504.
Strain-balanced InGaN/GaN multiple quantum wells
Broeck, D. M., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. (2014), Applied Physics Letters, 105(3).
Carrier transport and improved collection in thin-barrier InGaAs/GaAsP strained quantum well solar cells
Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., & Bedair, S. M. (2013), IEEE Journal of Photovoltaics, 3(1), 278–283.
Gallium nitride nanowires by maskless hot phosphoric wet etching
Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. (2013), Applied Physics Letters, 103(8).
Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures
Samberg, J. P., Alipour, H. M., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., LeBeau, J. M., … Bedair, S. M. (2013), Applied Physics Letters, 103(7).
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy
Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. (2013), Journal of Crystal Growth, 367, 88–93.
Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures
Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., … Bedair, S. M. (2013), In 2013 ieee 39th photovoltaic specialists conference (pvsc) (pp. 1737–1740).
Overgrowth of GaN on GaN nanowires produced by mask-less etching
Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012), (Vol. 352, pp. 203–208).
Embedded voids approach for low defect density in epitaxial GaN films
Frajtag, P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011), Applied Physics Letters, 98(2).
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films
Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011), Journal of Crystal Growth, 322(1), 27–32.
Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates
Nepal, N., Frajtag, P., Zavada, J. M., El-Masry, N. A., & Bedair, S. M. (2011), In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).
Strain relaxation in InxGa1-xN/GaN quantum well structures
Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. (2011), In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).
Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion
Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., … El Masry, N. A. (2010), In Novel materials and devices for spintronics (Vol. 1183, pp. 45–50).
Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films
Nepal, N., Luen, M. O., Zavada, J. M., Bedair, S. M., Frajtag, P., & El-Masry, N. A. (2009), Applied Physics Letters, 94(13).
Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range
Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. (2008), Applied Physics Letters, 92(10).
Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire
Jagannadham, K., Berkman, E. A., & Elmasry, N. (2008), Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 26(3), 375–379.
Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys
Nepal, N., Bedair, S. M., El-Masry, N. A., Lee, D. S., Steckl, A. J., & Zavada, J. M. (2007), Applied Physics Letters, 91(22).
Correlation between photoluminescence and magnetic properties of GaMnN films
Nepal, N., Mahros, A. M., Bedair, S. M., El-Masry, N. A., & Zavada, J. M. (2007), Applied Physics Letters, 91(24).
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. (2007), Applied Physics Letters, 90(15).
Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature
Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. (2007), Applied Physics Letters, 90(25).
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005), Applied Physics Letters, 86(10).
Five-nanometer thick silicon on insulator layer
Elmasry, N. A., Hunter, M., Elnaggar, A., & Bedair, S. M. (2005), Journal of Applied Physics, 98(10).
Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface
Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004), Applied Physics Letters, 85(17), 3809–3811. https://doi.org/10.1063/1.1810216
Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence
Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004), Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(4), 1191–1194.
Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)
Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., Leboeuf, S. F., & Bedair, S. M. (2002), Applied Physics Letters, 80(14), 2475–2477.
Room temperature ferromagnetic properties of (Ga, Mn)N
Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001), Applied Physics Letters, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231
Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices
Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. (2001), Materials Letters, 51(6), 500–503. https://doi.org/10.1016/S0167-577X(01)00342-1
Self-assembled AlInGaN quaternary superlattice structures
El-Masry, N. A., Behbehani, M. K., Leboeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001), Applied Physics Letters, 79(11), 1616–1618. https://doi.org/10.1063/1.1400763
Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys
Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001), Journal of Applied Physics, 89(1), 798–800. https://doi.org/10.1063/1.1330760
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000), Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361
Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation
Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000), Applied Physics Letters, 76(14), 1935–1937. https://doi.org/10.1063/1.126217
Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition
Liu, S. X., Bedair, S. M., & El-Masry, N. A. (2000), Materials Letters, 42(1-2), 121–129.
The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs
Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000), Journal of Magnetism and Magnetic Materials, 218(2/3), 177–181. https://doi.org/10.1016/S0304-8853(00)00403-0
Determination of the critical layer thickness in the InGaN/GaN heterostructures
Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999), Applied Physics Letters, 75(18), 2776–2778. https://doi.org/10.1063/1.125146
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999), MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics
Venkatasubramanian, R., Colpitts, T., O’Quinn, B., Liu, S., El-Masry, N., & Lamvik, M. (1999), Applied Physics Letters, 75(8), 1104–1106. https://doi.org/10.1063/1.124610
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films
Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999), MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).
Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN
Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. Applied Physics Letters, 75(17), 2566–2568,
Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition
Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999), Applied Physics Letters, 75(15), 2202–2204. https://doi.org/10.1063/1.124964
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999), Journal of Electronic Materials, 28(3), 295–300. https://doi.org/10.1007/s11664-999-0030-1
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999), MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. (1998), Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282–1285.
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire
Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998), Journal of Crystal Growth, 195(1-4), 333–339. https://doi.org/10.1016/S0022-0248(98)00638-1
Effect of hydrogen on the indium incorporation in ingan epitaxial films
Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997), Applied Physics Letters, 70(4), 461–463. https://doi.org/10.1063/1.118181
Epitaxial deposition of gainn and inn using the rotating susceptor ale system
McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. (1997), Applied Surface Science, 112(1997 Mar.), 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0
Growth and characterization of in-based nitride compounds
Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & A., E.-M. N. (1997), Journal of Crystal Growth, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9
Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films
Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997), Applied Physics Letters, 71(14), 2023–2025. https://doi.org/10.1063/1.119775
MBE Growth and properties of GaN on GaN/SiC substrates
Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997), Solid-State Electronics, 41(2), 213–218. https://doi.org/10.1016/S0038-1101(96)00169-4
Mocvd of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & El-Masry, N. A. (1997), Journal of Crystal Growth, 170(1-4), 817–821. https://doi.org/10.1016/S0022-0248(96)00656-2
Criterion for suppressing wafer bow in heterostructures by selective epitaxy
Elmasry, N. A., Hussien, S. A., Fahmy, A. A., Karam, N. H., & Bedair, S. M. (1992), Materials Letters, 14(1), 58–62.
A criterion for the suppression of plastic-deformation in laser-assisted chemical vapor-deposition of GAAS
Hussien, S. A., Fahmy, A. A., Elmasry, N. A., & Bedair, S. M. (1990), Journal of Applied Physics, 67(8), 3853–3857.

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