Douglas Irving
Associate Professor
University Faculty Scholar
- 919-515-6154
- dlirving@ncsu.edu
- Engineering Building I (EB1) 3028A
Douglas Irving’s interests include multiscale and atomistic simulation of interfacial degradation, thermal and mass transport, lubrication, and wear mechanisms; first principles simulation of optoelectronic properties, heterogeneous interfaces, surfaces, ultrathin films, and degradation mechanisms.
Dr. Irving’s research group uses multiscale, atomistic and first principles simulation to develop a fundamental understanding of materials used in technologically important applications and processes. Current projects include multiscale simulation of the degradation of metal catalytic layers in solid oxide fuel cells, degradation of metal/metal electrical contacts, lubrication, thermal and mass transport, and electric current driven processes, as well as, first principles simulation of degradation mechanisms, interfacial structure, stability of ultrathin films, optoelectronics, and growth mechanisms.
Education
Materials Science and Engineering
University of Florida
Materials Science and Engineering
University of Florida
Physics
Furman University
Publications
- Conductivity of iron-doped strontium titanate in the quenched and degraded states
- Long, D. M., Cai, B., Baker, J. N., Bowes, P. C., Bayer, T. J. M., Wang, J.-J., … Dickey, E. C. (2019), JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 102(6), 3567–3577. https://doi.org/10.1111/jace.16212
- Finite temperature elastic properties of equiatomic CoCrFeNi from first principles
- Wu, Y., & Irving, D. L. (2019), SCRIPTA MATERIALIA, 162, 176–180. https://doi.org/10.1016/j.scriptamat.2018.11.010
- Mechanisms governing metal vacancy formation in BaTiO3 and SrTiO3 (vol 124, 114101, 2018)
- Baker, J. N., Bowes, P. C., Harris, J. S., & Irving, D. L. (2019), JOURNAL OF APPLIED PHYSICS, 125(1). https://doi.org/10.1063/1.5084251
- Oxygen and silicon point defects in Al0.65Ga0.35N
- Harris, J. S., Gaddy, B. E., Collazo, R., Sitar, Z., & Irving, D. L. (2019), PHYSICAL REVIEW MATERIALS, 3(5). https://doi.org/10.1103/PhysRevMaterials.3.054604
- Space charge control of point defect spin states in AlN
- Bowes, P. C., Wu, Y., Baker, J. N., Harris, J. S., & Irving, D. L. (2019), APPLIED PHYSICS LETTERS, 115(5). https://doi.org/10.1063/1.5099916
- Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
- Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018), Applied Physics Letters, 112(6). https://doi.org/10.1063/1.5011984
- Hydrogen solubility in donor-doped SrTiO3 from first principles
- Baker, J. N., Bowes, P. C., & Irving, D. L. (2018), APPLIED PHYSICS LETTERS, 113(13). https://doi.org/10.1063/1.5047793
- Influence of impurities on the high temperature conductivity of SrTiO3
- Bowes, P. C., Baker, J. N., Harris, J. S., Behrhorst, B. D., & Irving, D. L. (2018), Applied Physics Letters, 112(2). https://doi.org/10.1063/1.5000363
- Mechanisms governing metal vacancy formation in BaTiO3 and SrTiO3
- Baker, J. N., Bowes, P. C., Harris, J. S., & Irving, D. L. (2018), JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5044746
- On compensation in Si-doped AlN
- Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018), Applied Physics Letters, 112(15). https://doi.org/10.1063/1.5022794