Douglas Irving

Associate Professor

University Faculty Scholar
  • 919-515-6154
  • Engineering Building I (EB1) 3028A

Douglas Irving’s interests include multiscale and atomistic simulation of interfacial degradation, thermal and mass transport, lubrication, and wear mechanisms; first principles simulation of optoelectronic properties, heterogeneous interfaces, surfaces, ultrathin films, and degradation mechanisms.

Dr. Irving’s research group uses multiscale, atomistic and first principles simulation to develop a fundamental understanding of materials used in technologically important applications and processes. Current projects include multiscale simulation of the degradation of metal catalytic layers in solid oxide fuel cells, degradation of metal/metal electrical contacts, lubrication, thermal and mass transport, and electric current driven processes, as well as, first principles simulation of degradation mechanisms, interfacial structure, stability of ultrathin films, optoelectronics, and growth mechanisms.

Education

Ph.D. 2004

Materials Science and Engineering

University of Florida

M.S. 2002

Materials Science and Engineering

University of Florida

B.S. 1997

Physics

Furman University

Publications

An informatics software stack for point defect-derived opto-electronic properties: the Asphalt Project
Baker, J. N., Bowes, P. C., Harris, J. S., & Irving, D. L. (2019), MRS COMMUNICATIONS, 9(3), 839–845. https://doi.org/10.1557/mrc.2019.106
Conductivity of iron-doped strontium titanate in the quenched and degraded states
Long, D. M., Cai, B., Baker, J. N., Bowes, P. C., Bayer, T. J. M., Wang, J.-J., … Dickey, E. C. (2019), JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 102(6), 3567–3577. https://doi.org/10.1111/jace.16212
Finite temperature elastic properties of equiatomic CoCrFeNi from first principles
Wu, Y., & Irving, D. L. (2019), SCRIPTA MATERIALIA, 162, 176–180. https://doi.org/10.1016/j.scriptamat.2018.11.010
Mechanisms governing metal vacancy formation in BaTiO3 and SrTiO3 (vol 124, 114101, 2018)
Baker, J. N., Bowes, P. C., Harris, J. S., & Irving, D. L. (2019), JOURNAL OF APPLIED PHYSICS, 125(1). https://doi.org/10.1063/1.5084251
Oxygen and silicon point defects in Al0.65Ga0.35N
Harris, J. S., Gaddy, B. E., Collazo, R., Sitar, Z., & Irving, D. L. (2019), PHYSICAL REVIEW MATERIALS, 3(5). https://doi.org/10.1103/PhysRevMaterials.3.054604
Space charge control of point defect spin states in AlN
Bowes, P. C., Wu, Y., Baker, J. N., Harris, J. S., & Irving, D. L. (2019), APPLIED PHYSICS LETTERS, 115(5). https://doi.org/10.1063/1.5099916
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018), Applied Physics Letters, 112(6). https://doi.org/10.1063/1.5011984
Hydrogen solubility in donor-doped SrTiO3 from first principles
Baker, J. N., Bowes, P. C., & Irving, D. L. (2018), APPLIED PHYSICS LETTERS, 113(13). https://doi.org/10.1063/1.5047793
Influence of impurities on the high temperature conductivity of SrTiO3
Bowes, P. C., Baker, J. N., Harris, J. S., Behrhorst, B. D., & Irving, D. L. (2018), Applied Physics Letters, 112(2). https://doi.org/10.1063/1.5000363
Mechanisms governing metal vacancy formation in BaTiO3 and SrTiO3
Baker, J. N., Bowes, P. C., Harris, J. S., & Irving, D. L. (2018), JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5044746

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