- Engineering Building I (EB1) 3002C
Lew Reynolds was a Distinguished Member of Technical Staff at Bell Laboratories for 23 years prior to coming to NCSU in 2003. He has 30 years experience in the growth, characterization, and device development of III-V compound semiconductors. He has investigated extensively the influence of doping profiles on laser characteristics, developed MOVPE growth techniques for growth on gratings and along mesa sidewalls to minimize defects, and collaborated on the design of high speed photonic devices. More recent efforts have focused on mobility modulation in AlGaN HFET structures, strain relaxation in InGaAs solar cell structures, characterization of GaAsSb nanowires for mid-IR applications, and the pulse width dependence of optical gain in conjugated polymers.
He has been issued eight U.S. patents. His current research interests are compound semiconductor materials and devices, electrical and optical properties, thin film epitaxial growth of group III-nitrides and group II-oxides, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, quantum well structures, electronic and photonic devices, optical properties of conjugated polymers, and nanostructured materials. Currently teach two undergraduate laboratory courses and a graduate one on nanoelectronics. Faculty contact responsible for use of MSE lab service center equipment, for example, SEM, X-ray diffractometer, SQUID VSM, and PPMS.
University of Virginia
University of Virginia
Virginia Military Institute
Dr. Reynolds' interests include compound semiconductor materials and devices, epitaxial thin film growth, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, nanoscale materials, and optical properties of conjugated polymers.
- Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy
- Ahmad, E., Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(3).
- Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy
- Sharma, M., Deshmukh, P., Kasanaboina, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(12).
- Intrinsic gain and gain degradation modulated by excitation pulse width in a semiconducting conjugated polymer
- Lampert, Z. E., Papanikolas, J. M., Lappi, S. E., & Reynolds, C. L. (2017), Optics and Laser Technology, 94, 77–85. https://doi.org/10.1016/j.optlastec.2017.03.019
- A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range
- Ahmad, E., Karim, M. R., Bin Hafiz, S., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Scientific Reports, 7.
- Effect of growth parameters and substrate surface preparation for high-density vertical GaAs/GaAsSb core-shell nanowires on silicon with photoluminescence emission at 1.3 mu m
- Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Journal of Electronic Materials, 45(4), 2108–2114.
- Effects of annealing on GaAs/GaAsSbN/GaAs core-multi-shell nanowires
- Kasanaboina, P., Sharma, M., Deshmukh, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Nanoscale Research Letters, 11.
- Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy
- Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Rawdanowicz, T. A., Liu, Y., White, R. M., & Iyer, S. (2016), Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 34(2).
- Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure
- Ahmad, E., Kasanaboina, P. K., Karim, M. R., Sharma, M., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Semiconductor Science and Technology, 31(12).
- Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
- Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Liu, Y., & Iyer, S. (2015), Semiconductor Science and Technology, 30(10).
- Comparison of the stability of functionalized GaN and GaP
- Wilkins, S. J., Paskova, T., Reynolds, C. L., & Ivanisevic, A. (2015), Chemphyschem, 16(8), 1687–1694. https://doi.org/10.1002/cphc.201500105
- Excellence in Research: â€œGaAsSb/GaAs Nanowire Based Avalanche Photodetectors on Siâ€
- National Science Foundation (NSF)(9/15/18 - 8/31/21)
- Dilute Nitride GaAsSbN/GaAs Nanowires for Infrared Photodectors
- US Navy-Office Of Naval Research(6/01/16 - 5/31/19)
- Identification/Quantification of Low Level Recombination Centers in Silicon
- NCSU Silicon Solar Consortium (SiSoC) Research Center(12/01/14 - 12/31/16)
- A Study of GaAsSb Nanowires for Photodetectors
- US Army - Army Research Office(4/27/15 - 10/26/18)
- Interfacial Induced Properties in GaN Devices
- National Science Foundation (NSF)(9/01/13 - 8/31/18)
- Proposal for Phase II of the SiSoC NSF I/UCRC: Enhancing the Manufacturability of Silicon Solar Cells
- National Science Foundation (NSF)(10/01/13 - 9/30/18)
- A study of GaAsSb Nanowires by Molecular Beam Epitaxy for Near IR Applications
- US Army - Army Research Office(6/15/11 - 6/14/15)
- SiSoC Associate Membership - MEMC
- SunEdison, Inc. formerly MEMC Electronic Materials Co.(1/01/08 - 12/31/15)