Lew Reynolds

Emeritus Professor

Professor Emeritus Lew Reynolds retired from the department in 2023. He was the Graduate Distance Education Coordinator, Director of the Nanoengineering Graduate Program, and a Teaching Professor. Reynolds was a Distinguished Member of Technical Staff at Bell Laboratories for 23 years prior to coming to NCSU in 2003. He has 30 years of experience in the growth, characterization, and device development of III-V compound semiconductors. He has investigated extensively the influence of doping profiles on laser characteristics, developed MOVPE growth techniques for growth on gratings and along mesa sidewalls to minimize defects, and collaborated on the design of high-speed photonic devices. More recent efforts have focused on mobility modulation in AlGaN HFET structures, strain relaxation in InGaAs solar cell structures, characterization of GaAsSb nanowires for mid-IR applications, and the pulse width dependence of optical gain in conjugated polymers.

Reynolds has been issued eight U.S. patents. His research interests are compound semiconductor materials and devices, electrical and optical properties, thin film epitaxial growth of group III-nitrides and group II-oxides, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, quantum well structures, electronic and photonic devices, optical properties of conjugated polymers, and nanostructured materials.


GaAs/GaAsSb Core-Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3?m Light Detection
Pokharel, R., Kuchoor, H., Parakh, M., Devkota, S., Dawkins, K., Ramaswamy, P., … Iyer, S. (2023, March 20), ACS APPLIED NANO MATERIALS. https://doi.org/10.1021/acsanm.2c03644
Magneto-Mechanical Actuation Induces Endothelial Permeability
Kanber, M., Umerah, O., Brindley, S., Zhang, X., Brown, J. M., Reynolds, L., & Beltran-Huarac, J. (2023), ACS BIOMATERIALS SCIENCE & ENGINEERING, 9(12), 6902–6914. https://doi.org/10.1021/acsbiomaterials.3c01571
The Role of Carbon Content: A Comparison of the Nickel Particle Size and Magnetic Property of Nickel/Polysiloxane-Derived Silicon Oxycarbide
Yang, N., Zhang, X., Reynolds, L., Kumah, D., & Xu, C. (2023, January 24), ADVANCED ENGINEERING MATERIALS, Vol. 1. https://doi.org/10.1002/adem.202201453
A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy
Devkota, S., Parakh, M., Ramaswamy, P., Kuchoor, H., Penn, A., Reynolds, L., & Iyer, S. (2022), CATALYSTS, 12(5). https://doi.org/10.3390/catal12050451
A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
Ramaswamy, P., Devkota, S., Pokharel, R., Nalamati, S., Stevie, F., Jones, K., … Iyer, S. (2021), SCIENTIFIC REPORTS, 11(1). https://doi.org/10.1038/s41598-021-87825-4
Dual-Responsive Microgels for Structural Repair and Recovery of Nonwoven Membranes for Liquid Filtration
Ramesh, S., Davis, J., Roros, A., Eiben, J., Fabiani, T., Smith, R., … Menegatti, S. (2021), ACS APPLIED POLYMER MATERIALS, 3(3), 1508–1517. https://doi.org/10.1021/acsapm.0c01360
Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching
Allen-Perry, K., Straka, W., Keith, D., Han, S., Reynolds, L., Gautam, B., & Autrey, D. E. (2021), MATERIALS, 14(3). https://doi.org/10.3390/ma14030694
A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
Devkota, S., Parakh, M., Johnson, S., Ramaswamy, P., Lowe, M., Penn, A., … Iyer, S. (2020), NANOTECHNOLOGY, 31(50). https://doi.org/10.1088/1361-6528/abb506
Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires
Kumar, R., Liu, Y., Li, J., Iyer, S., & Reynolds, L. (2020), SCIENTIFIC REPORTS, 10(1). https://doi.org/10.1038/s41598-020-65805-4
Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application
Pokharel, R., Ramaswamy, P., Devkota, S., Parakh, M., Dawkins, K., Penn, A., … Iyer, S. (2020), ACS APPLIED ELECTRONIC MATERIALS, 2(9), 2730–2738. https://doi.org/10.1021/acsaelm.0c00450

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Lew Reynolds