Lew Reynolds

Teaching Professor

Director of Graduate Program, Nanoengineering
Instrumentation Manager
  • 919-515-7622
  • Engineering Building I (EB1) 3002C

Lew Reynolds was a Distinguished Member of Technical Staff at Bell Laboratories for 23 years prior to coming to NCSU in 2003. He has 30 years experience in the growth, characterization, and device development of III-V compound semiconductors. He has investigated extensively the influence of doping profiles on laser characteristics, developed MOVPE growth techniques for growth on gratings and along mesa sidewalls to minimize defects, and collaborated on the design of high speed photonic devices. More recent efforts have focused on mobility modulation in AlGaN HFET structures, strain relaxation in InGaAs solar cell structures, characterization of GaAsSb nanowires for mid-IR applications, and the pulse width dependence of optical gain in conjugated polymers.

He has been issued eight U.S. patents. His current research interests are compound semiconductor materials and devices, electrical and optical properties, thin film epitaxial growth of group III-nitrides and group II-oxides, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, quantum well structures, electronic and photonic devices, optical properties of conjugated polymers, and nanostructured materials. Currently teach two undergraduate laboratory courses and a graduate one on nanoelectronics. Faculty contact responsible for use of MSE lab service center equipment, for example, SEM, X-ray diffractometer, SQUID VSM, and PPMS.


Ph.D. 1974

Materials Science

University of Virginia

M.S. 1972

Materials Science

University of Virginia

B.S. 1970


Virginia Military Institute

Research Description

Dr. Reynolds' interests include compound semiconductor materials and devices, epitaxial thin film growth, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, nanoscale materials, and optical properties of conjugated polymers.


A Study of GaAs1-xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors
Nalamati, S., Sharma, M., Deshmukh, P., Kronz, J., Lavelle, R., Snyder, D., … Iyer, S. (2019), ACS APPLIED NANO MATERIALS, 2(7), 4528–4537. https://doi.org/10.1021/acsanm.9b00893
Improved performance of GaAsSb/AIGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing
Sharma, M., Ahmad, E., Dev, D., Li, J., Reynolds, C. L., Liu, Y., & Iyer, S. (2019), NANOTECHNOLOGY, 30(3). https://doi.org/10.1088/1361-6528/aae148
Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films
Akouala, C. R., Kumar, R., Punugupati, S., Reynolds, C. L., Jr., Reynolds, J. G., Mily, E. J., … Hunte, F. (2019), APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 125(5). https://doi.org/10.1007/s00339-019-2592-y
Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m
Deshmukh, P., Sharma, M., Nalamati, S., Reynolds, C. L., Liu, Y., & Iyer, S. (2018). Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33(12). https://doi.org/10.1088/1361-6641/aae7b8,
Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition
Jagannadham, K., Das, K., Reynolds, C. L., & El-Masry, N. (2018), Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191. https://doi.org/10.1007/s10854-018-9551-9
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range
Ahmad, E., Karim, M. R., Bin Hafiz, S., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Scientific Reports, 7. https://doi.org/10.1038/s41598-017-09280-4
Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy
Ahmad, E., Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(3). https://doi.org/10.1088/1361-6641/32/3/035002
Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures
El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Jr., Liu, Z., & Bedair, S. M. (2017), Applied Physics Letters, 111(8), 082402. https://doi.org/10.1063/1.4986431
Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy
Sharma, M., Deshmukh, P., Kasanaboina, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(12). https://doi.org/10.1088/1361-6641/aa90b0
Highly anisotropic magneto-transport and field orientation dependent oscillations in aligned carbon nanotube/epoxy composites
Wells, B., Kumar, R., Reynolds, C. L., Peters, K., & Bradford, P. D. (2017), Applied Physics Letters, 111(26). https://doi.org/10.1063/1.4999503

View all publications via NC State Libraries


Excellence in Research: “GaAsSb/GaAs Nanowire Based Avalanche Photodetectors on Si”
National Science Foundation (NSF)(9/15/18 - 8/31/21)
Dilute Nitride GaAsSbN/GaAs Nanowires for Infrared Photodectors
US Navy-Office Of Naval Research(6/01/16 - 2/29/20)
Identification/Quantification of Low Level Recombination Centers in Silicon
NCSU Silicon Solar Consortium (SiSoC) Research Center(12/01/14 - 12/31/16)
A Study of GaAsSb Nanowires for Photodetectors
US Army - Army Research Office(4/27/15 - 10/26/18)
Interfacial Induced Properties in GaN Devices
National Science Foundation (NSF)(9/01/13 - 8/31/18)
Proposal for Phase II of the SiSoC NSF I/UCRC: Enhancing the Manufacturability of Silicon Solar Cells
National Science Foundation (NSF)(10/01/13 - 9/30/18)
A study of GaAsSb Nanowires by Molecular Beam Epitaxy for Near IR Applications
US Army - Army Research Office(6/15/11 - 6/14/15)
SiSoC Associate Membership - MEMC
SunEdison, Inc. formerly MEMC Electronic Materials Co.(1/01/08 - 12/31/15)