Dr. Ramon Collazo

Dr. Collazo joined the MSE faculty in August 2011 after after having been a Research Assistant Professor at NCSU since 2006. He has been awarded the Facundo Bueso Medal for Physics and has authored over 60 publications and given presentations at national and international conferences.

Dr. Collazo received his BS in Physics from the University of Puerto Rico, San Juan. Beginning in 2002 and continuing until his faculty appointment in 2011, Dr. Collazo was also a Senior Research Scientist at HexaTech Inc., where he directed epitaxial and device development. At NCSU, he has been involved in growth and characterization of wide band gap semiconductor thin films, especially nitrides and diamond, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunctions along with their application to the first lateral p/n junction. Additionally, he has been involved in the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications

Our Research

Our research involves developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunctions along with their application to the first lateral p/n junction. Additionally, we work with the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications.

Topics include:

  • Thermodynamic approach to the metal organic chemical deposition process of III-nitrides
  • Control of polarity in III-nitride and fabrication of lateral polar homojunctions
  • Development of the technology for AlN and Al-rich AlGaN epitaxy on AlN single crystals substrates