ABOUT US
Earlier Newsletter: Vol.1(1) July 2006, Vol.2(1) January 2007, Vol.2(2) July 2007
Areas of Research
Research includes theory, experiment, modeling and simulation in four major interrelated
tasks:
Surface defects and contamination of wafers in device regions.
Fundamentals and issues related to the elimination of bulk defects, and mechanisms
and processes for gettering.
Understanding wafers and alternate substrates such as Silicon on Insulator (SOI),
Strained Silicon (sSi) on Bulk or Insulator (SSOI), GE on insulator (GEOI), etc.
Developing metrology standards and new characterization techniques.
Each of the above tasks will be jointly performed by at least two of the participating universities. The educational and technical mission of the Center will be achieved through strong interactions between graduate-, and post-graduate students and the company personnel of the Center Industry members.
Students interested in a "SiWEDS GRADUATE FELLOWSHIP" click here
SiWEDS researchers interested in a "NSF I/UCRC FELLOWSHIP" click here