| Nonequilibrium processing of polymeric materials by mechanical attrition |
Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. (2000). Nonequilibrium processing of polymeric materials by mechanical attrition. In J. Eckert, H. Schlorb, & L. Schultz (Eds.), International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials (1999: Dresden, Germany). (pp. 49-56 pt.1). Utikon-Zurich, Switz.; Enfield, NH: Trans Tech Publications.
Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M.
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2000 |
| Discrete element modeling of shock compression of hexagonal boron nitride powder with and without copper addition |
Journal of Materials Processing Technology, 85(1-3), 109-114.
Horie, Y., & Yano, K.
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1999 |
| Stimulated emission in GaN thin films in the temperature range of 300-700 K |
Journal of Applied Physics, 85(3), 1792-1795.
Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Yang, W., Perry, W. G., Bremser, M. D., & Davis, R. F.
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1999 |
| Thermophysical properties of alpha-tungsten carbide |
Journal of the American Ceramic Society, 82(1), 129-135.
Reeber, R. R., & Wang, K.
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1999 |
| Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution |
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(1), 108-112.
Klein, T. M., Anderson, T. M., Chowdhury, A. I., & Parsons, G. N.
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1999 |
| Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers |
Applied Physics Letters, 74(7), 985-987.
Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., & Tsong, I. S. T.
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1999 |
| Imaging micro-cracks in gold films: a comparative study of scanning tunneling and atomic force microscopies |
Ultramicroscopy, 76(1-2), 61-67.
Neves, B. R. A., Vilela, J. M. C., Russell, P. E., Reis, A. C. C., & Andrade, M. S.
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1999 |
| Studies of hydrogen-induced degradation processes in SrBi(2)Ta(2)O(9) ferroelectric film-based capacitors |
Applied Physics Letters, 74(8), 1162-1164.
Im, J., Auciello, O., Krauss, A. R., Gruen, D. M., Chang, R. P. H., Kim, S. H., & Kingon, A. I.
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1999 |
| influences of reactant composition and substrate material on the combustion synthesis of diamond |
Journal of Materials Research, 14(1), 259-269.
Wolden, C. A., Draper, C. E., Sitar, Z., & Prater, J. T.
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1999 |
| Simulation of metallic impurity gettering in silicon by MeV ion implantation |
Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322-328.
Brown, R. A., Kononchuk, O., & Rozgonyi, G. A.
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1999 |
| Mechanical properties of nanotubule fibers and composites determined from theoretical calculations and simulations (vol 36, pg 1, 1998) |
Carbon, 37(2), 347.
Sinnott, S. B., Shenderova, O. A., White, C. T., & Brenner, D. W.
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1999 |
| Evolution of deep-level centers in p-type silicon following ion implantation at 85 K |
Applied Physics Letters, 74(9), 1263-1265.
Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A.
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1999 |
| Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte |
Journal of Applied Electrochemistry, 29(1), 75-80.
Roberson, S. L., Finello, D., & Davis, R. F.
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1999 |
| Silver-hydrogen interactions in crystalline silicon |
Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551-5560.
Yarykin, N., Sachse, J. U., Lemke, H., & Weber, J.
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1999 |
| Room temperature growth of cubic boron nitride |
Applied Physics Letters, 74(11), 1552-1554.
Feldermann, H., Merk, R., Hofsass, H., Ronning, C., & Zheleva, T.
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1999 |
| Characterization of silica-supported Pd-Au clusters by X-ray absorption spectroscopy |
Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, 103(2), 321-329.
Reifsnyder, S. N., & Lamb, H. H.
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1999 |
| Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites |
Composites. Part A, Applied Science and Manufacturing, 30(4), 463-470.
More, K. L., Ailey, K. S., Lowden, R. A., & Lin, H. T.
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1999 |
| Photon-induced localization in optically absorbing materials |
Physics Letters. A, 253(1-2), 93-97.
Mantese, L., Bell, K. A., Aspnes, D. E., & Rossow, U.
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1999 |
| Thermal residual stress modeling in AlN and GaN multilayer samples |
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.18).
Wang, K., & Reeber, R. R.
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1999 |
| Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride |
Journal of Electronic Materials, 28(3), 295-300.
Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F.
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1999 |
| Initial stages of heteroepitaxy of GaP on selected silicon surfaces |
Journal of the Electrochemical Society, 146(3), 1147-1150.
Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S.
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1999 |
| low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering |
Journal of the Electrochemical Society, 146(3), 1189-1196.
Ban, I., & Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M.
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1999 |
| Effects of oxygen on selective silicon deposition using disilane |
Materials Letters, 38(6), 418-422.
O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., & Maher, D. M.
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1999 |
| Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics |
Applied Physics Letters, 74(14), 2005-2007.
Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C.
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1999 |
| Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors |
IEEE Electron Device Letters, 20(4), 179-181.
Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, J. R., Wortman, J. J., Venables, R. D., Xu, M., & Venables, D.
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1999 |
