Publications

Showing results for ""El-Masry, N"" 1-25 of 42 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Embedded voids approach for low defect density in epitaxial GaN films Applied Physics Letters, 98(2). Frajtag, P., El-Masry, N. A., Nepal, N., & Bedair, S. M. 2011
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films Journal of Crystal Growth, 322(1), 27-32. Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. 2011
Strain relaxation in InxGa1-xN/GaN quantum well structures Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. 2011
Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Nepal, N., Frajtag, P., Zavada, J. M., El-Masry, N. A., & Bedair, S. M. 2011
Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion Materials Research Society Symposium Proceedings, 1183) (pp. 45-50). Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., Bedair, S. M., & El Masry, N. A. 2010
Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films Applied Physics Letters, 94(13). Nepal, N., Luen, M. O., Zavada, J. M., Bedair, S. M., Frajtag, P., & El-Masry, N. A. 2009
Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range Applied Physics Letters, 92(10). Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. 2008
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures Applied Physics Letters, 90(15). Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. 2007
Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature Applied Physics Letters, 90(25). Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. 2007
Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys Applied Physics Letters, 91(22). Nepal, N., Bedair, S. M., El-Masry, N. A., Lee, D. S., Steckl, A. J., & Zavada, J. M. 2007
Correlation between photoluminescence and magnetic properties of GaMnN films Applied Physics Letters, 91(24). Nepal, N., Mahros, A. M., Bedair, S. M., El-Masry, N. A., & Zavada, J. M. 2007
Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(4), 1191-1194. Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. 2004
Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface Applied Physics Letters, 85(17), 3809-3811. Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. 2004
Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08) Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., Leboeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., Leboeuf, S. F., & Bedair, S. M. 2002
Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys Journal of Applied Physics, 89(1), 798-800. Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., Bedair, S. M., El-Masry, N. A., & Adar, F. 2001
Self-assembled AlInGaN quaternary superlattice structures Applied Physics Letters, 79(11), 1616-1618. El-Masry, N. A., Behbehani, M. K., Leboeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. 2001
Room temperature ferromagnetic properties of (Ga, Mn)N Applied Physics Letters, 79(21), 3473-3475. Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., & Bedair, S. M. 2001
Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices Materials Letters, 51(6), 500-503. Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. 2001
Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition Materials Letters, 42(1-2), 121-129. Liu, S. X., Bedair, S. M., & El-Masry, N. A. 2000
Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation Applied Physics Letters, 76(14), 1935-1937. Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. 2000
planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs Journal of Magnetism and Magnetic Materials, 218(2/3), 177-181. Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. 2000
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures Applied Physics Letters, 77(25), 4121-4123. Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. 2000
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials, 28(3), 295-300. Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. 1999
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. 1999
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Schetzina, J. F., Haberern, K. W., Kong, H. S., & Edmond, J. S. 1999

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