Research Interests

Ion implantation and defects in semiconductors, rapid thermal and transient thermal processing of semiconductors, laser-solid interactions, doping, diffusion and gettering in semiconductors and supersaturated semiconductor alloys for advanced electronic devices, high temperature superconductors, diamond and diamond-like thin films, atomic scale characterization of defects and interfaces, physical and chemical vapor deposition of thin films, pulsed laser deposition, Laser-MBE, atomic-resolution electron microscopy, electrical and optical properties, modeling of thin film growth and defects and interfaces, novel approaches to thin film epitaxy, semiconductor thin film heterostructures and solid-state devices, and nanostructured materials.

Background and Research

Record of Professional Work Experience

2002- The John C. C. Fan Family Distinguished Chair Professor
2007- ORNL Distinguished Visiting Scientist
1990- NCSU Distinguished University Professor ( Materials Science and Engineering, Electrical and Computer Engineering and Physics) and Director of Center for Advanced Materials and Smart Structures
1990-92 National Science Foundation, Division of Materials Research, Director*
1984- North Carolina State University, Professor
1984-86 Microelectronics Center of North Carolina, Director
1972-84 Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron Microscopy Group
1971-72 Lawrence Berkeley National Lab., Research Metallurgist
*The DMR is the largest division of the NSF with over twenty Research Program Directorates and over $200M annual budget.

Specific Outstanding Technical and Professional Engineering Accomplishments and Contributions

Starting with his doctoral thesis, Narayan provided first direct evidence for the presence of vacancies and interstitials in ionic solids, and established, via rigorous in-situ diffusion experiments, the activation energy for pipe diffusion along the dislocations and grain boundaries to be half that in the bulk.  This research, recognized by numerous Awards, has proven to be pivotal to our understanding of basic phenomena in metals, ceramics and electronic materials and processing.  Narayan is internationally known for his seminal contributions in laser processing of novel materials including laser annealing and pulsed laser deposition, atomic-scale characterization, and atomistic modeling of dislocations and interfaces.  He invented novel supersaturated semiconductor alloys formed by solid phase epitaxy, and by liquid phase crystallization where melt-quenching rates are billions of degrees per second.  This research, featured twice in Science Magazine (5/4/1979 & 4/19/1991 issues), resulted in four U.S. patents and two IR-100 Awards.  Narayan discovered and patented new nanocrystalline metal-ceramic composites, invented 1-2-4 (Y1Ba2Cu4O8) superconductor with Tc~80-100 K, co-originated laser ablation for thin film deposition, and patented a novel method for synthesizing thin films.

The 1982 ORNL Review, Summarizing the Four Decades of ORNL Achievements, recorded three of Narayan’s achievements (relating to his three unprecedented IR-100 Awards) out of 12 totals in the field of materials science and engineering. This is truly remarkable considering the fact that the materials field represents a major mission of the Laboratory in which many billions of dollars were spent over the last forty years, and the fact that Narayan was associated with the ORNL only in the last decade.   He established atomic structure and properties of dislocations and grain boundaries in semiconductors and high –Tc superconductors.  He discovered the orientation dependence of core energy of dislocations, critical to obtaining dislocation-free silicon wafers for devices.  More recently, he has pioneered and patented a new concept of domain epitaxy where an integral number of lattice constants of the film match that of the substrate in large lattice mismatched systems.  The domain epitaxy is key to the formation of large-misfit thin film heterostructures, such as TiN films on silicon with 4/3 matching, and III-nitrides & ZnO films on sapphire with 6/7 matching. Narayan has invented new cubic ZnMgO alloys which can be grown epitaxially on (100)silicon  substrates for integration between optoelectronic and spintronic devices. Thus, Narayan’s inventions on domain matching epitaxy and fundamental advances in defects and interfaces address a major grand challenge for next-generation solid state devices, which is related to the formation of device-quality single-crystal thin films on substrates with lattice misfit ranging from 2% to 30%. These thin-film heterostructures lead to a successful integration of device functionality ranging from digital computing and signal processing, r-f devices and optical sources, to infrared detection systems. Narayan has discovered and patented a new method of self-assembly for processing nanostructured magnetic, photonic, electronic and structural materials. This research was judged by the National Science Foundation to be a major breakthrough in 2004. His pioneering research on synthesis and modeling of nanocrystalline metals, ceramics, and composites has established a solid foundation and clarified long-standing controversies related to their structure-property correlations. One of his ideas related to quantum confinement by thickness variation (creating Nano Pocket ©) is being used by Kopin Corp. to manufacture high-efficiency light emitting diodes for solid state lighting. He delivered The Edward DeMille Campbell memorial lecture entitled, “New Frontiers in Thin Film Growth and Nanomaterials,” at the Annual ASM International Meeting (October 17-20, 2004) in Columbus, Ohio.

Impact of Work

Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing, semiconductor doping and novel materials processing which led to a record three IR-100 Awards for new materials and technologies.  Narayan holds twenty five patents on domain matching epitaxy, defect reduction in thin film heterostructures, new materials, and processing of semiconductor devices. He holds ten patents with Kopin Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display, solid state lighting and device business. The Kopin Corp, MIT spin-off and Massachusetts based multinational Corp, has licensed patents related to domain epitaxy  and new cubic ZnMgO and ZnCdO alloys from NCSU to manufacture III-nitride and II-oxide based light emitting diodes and lasers covering the entire range of the visible spectrum. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as one of the breakthroughs of the year (2004). 

Landmark Publications

Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179 (1972); J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973).

Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and (Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and Phys. Rev. Lett. 52, 561 (1983).

Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289 (1981) and Appl. Phys. Lett. 41, 239 (1982).

Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Phy. Rev. B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Mat Rev  42, 137 (1997).

Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72, 297 (1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002).

Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J. Appl Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5 (2005)- Edward DeMille Campbell Lecture.

Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag 49, 475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2, 91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50, 3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl. Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006).

III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998); Appl Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys Lett 81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002).

Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett 76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); Appl Phys Lett 80,1337(2002).

Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006); J. Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl Phys Lett 87, 172502 (2005).

Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys 100, 123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88, 032106 (2006); J. Appl Phys 97, 083539 (2005).

 

Recent Patents

1	7,122,841	Bonding pad for gallium nitride-based light-emitting devices
2	7,105,118	Methods of forming three-dimensional nanodot arrays in a matrix
3	6,955,985	Domain epitaxy for thin film growth
4	6,881,983	Efficient light emitting diodes and lasers
5	6,847,052	Light-emitting diode device geometry
6	6,734,091	Electrode for p-type gallium nitride-based semiconductors
7	6,518,077	Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
8	6,423,983	Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Principal Technical Society Membership and Activities

Professional Recognition

Research and Training of Students

Professor Narayan directs the prestigious NSF Center for Advanced Materials and Smart Structures with a total ($1.2M annual funding to NCSU and NC A&T).  The Center was funded initially in 1998 for five years and has recently been renewed for the next five years. He also has ONR, NSF-NIRT and ARO funded Center for Nanostructured Materials with $275K/yr. He just received funding from NSF on Novel Organic Solar Cells $300K (2007-2010). In addition, he has had over $8.0M funding for his cutting-edge research in advanced materials and devices since 1984.  He has published over 500 papers in archival journals, edited 9 books and received 35 patents. Three of these patents led to unprecedented 3 IR-100 Awards for three new technologies. In 2004-5, Professor Narayan has published over forty Journal and reviewed conference proceedings papers. Narayan has graduated over 55 Ph.D. students and trained 25 Postdocs who are employed in leading companies such as IBM, INTEL, Motorola, Texas Instruments, AMD; National Labs., and universities.  Fourteen of them are in tenured and tenure-track faculty positions, six of these students received NSF-NYI/CAREER/PECASE Award, five MRS-Best Graduate Student Medals (1989, 1992, 1994, 2001, 2006), one TMS Hardy Gold Medal, three TMS Young Scientist Award, one IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. In 2005-6, he graduated five PhD students, two joined INTEL; one Applied Materials; one Texas A&M faculty; and one Post doctoral fellow at Los Alamos National Lab.

Most Recent Publications

1. Aggarwal R, Sudhakar Nori, Jin C, Pant P, Trichy GR, Kumar D, Narayan J, Narayan RJ, Effect of Pulsed Laser Deposition Parameters on Magnetic Properties of Multilayered Cobalt/ Amorphous Alumina Thin Films, ACTA MATERIALIA 57, 2040 (2009)
   
2. Haverkamp JD, Bourham MA, Du S and Narayan J, Plasma plume dynamics in magnetically assisted pulsed laser deposition, JOURNAL OF PHYSICS D-APPLIED PHYSICS 42 (2), 025201, (2009)
   
3. Aggarwal R, Jin C, Pant P, Narayan J, Narayan RJ, Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer, APPLIED PHYSICS LETTERS 93 (25) 251905 (2008)
4. Narayan J, Sudhakar Nori, Pandya DK, Avasthi DK and Smirnov AI, Defect dependent ferromagnetism in MgO doped with Ni and Co, APPLIED PHYSICS LETTERS 93, 082507 (2008)
5. Pant P, Narayan J, Wushuer A and Manghnani MH, Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers and Device Layers on Sapphire (0001), JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8 (11) 5985 (2008)
   
6. Wu XL, Narayan J, Zhu YT, Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni APPLIED PHYSICS LETTERS 93 (3), 031910 (2008)
   
7. Narayan J and Zhu YT, Self-thickening, cross-slip deformation twinning model, APPLIED PHYSICS LETTERS 92 (15), 151908 (2008)
   
8. Bhosle V and Narayan J, Observation of room temperature ferromagnetism in Ga:ZnO: A transition metal free transparent ferromagnetic conductor, APPLIED PHYSICS LETTERS 93 (2), 021912 (2008)
   
9. Ramachandran S, Prater JT, Sudhakar N, Kumar D and Narayan J, Magnetic properties of epitaxial oxide heterostructures, Solid State Communications 145, 18 (2008)
   
10. Haverkamp J D, Bourham M A, Du S, et al., Plasma instabilities in magnetically assisted pulsed laser deposition, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 41 (11) 115206 (2008)
    
11. Trichy GR, Chakraborti D, Narayan J, et al., Structure-magnetic property correlations in the epitaxial FePt system, APPLIED PHYSICS LETTERS, 92 (10) 102504 (2008)
    
12. Chakraborti D, Trichy GR, Prater JT, et al., The effect of oxygen annealing on ZnO : Cu and ZnO:(Cu,Al) diluted magnetic semiconductors, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 40 (24) 7606 (2007)
    
13. Bhosle V, Prater JT, Yang F, et al., Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications JOURNAL OF APPLIED PHYSICS, 102 (2) 023501 (2007)
14. G. R. Trichy, D. Chakraborti, J. Narayan, and H. Zhou Growth, characterization, and magnetic properties of FePt nanodots on Si (100) JOURNAL OF APPLIED PHYSICS 101 (3): Art. No. 033901  Aug 1 2007
15. Chakraborti D, Trichy G, Narayan J, et al. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors  JOURNAL OF APPLIED PHYSICS 102 (11): Art. No. 113908 DEC 1 2007
16. Bhosle V, Prater JT, Narayan J Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire  JOURNAL OF APPLIED PHYSICS 102 (1): Art. No. 013527 JUL 1 2007
17. Trichy GR, Chakraborti D, Narayan J, et al. Growth, characterization, and magnetic properties of FePt nanodots on Si (100)  JOURNAL OF APPLIED PHYSICS 102 (3): Art. No. 033901 AUG 1 2007
18. Venkateshan A, Singh R, Poole KF, et al. High-kappa gate dielectrics with ultra-low leakage current for sub-45 nm CMOS  ELECTRONICS LETTERS 43 (21): 1130-1132 OCT 8 2007
19. Chakraborti D, Trichy GR, Narayan J, et al. The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic semiconductors  JOURNAL OF PHYSICS D-APPLIED PHYSICS 40 (24): 7606-7613 DEC 21 2007
20. J. Narayan, P.Pant, W.Wei, et al. Nanostructured GaN Nucleation Layer for Light-Emitting diodes  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 7(8): 2719-2725 AUG 2007
21. Sudhakar N, Rajeev KP, Tiwari A, Narayan J et al. Room temperature ferromagnetism and magnetotransport properties of the layered manganite system La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0)  SOLID STATE COMMUNICATIONS 142 (9): 519-524 JUN 2007
22. Ramachandrana S, Narayan J, Prater JT Magnetic properties of Ni-doped MgO diluted magnetic insulators  APPLIED PHYSICS LETTERS 90 (13): Art. No. 132511 MAR 26 2007
23. Chakraborti D, Ramachandran S, Trichy G, et al.Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu  JOURNAL OF APPLIED PHYSICS 101 (5): Art. No. 053918 MAR 1 2007
24. Bhosle V, Narayan J Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire  APPLIED PHYSICS LETTERS 90 (10): Art. No. 101903 MAR 5 2007
25. Sudhakar N, Ningthoujam RS, Rajeev KP, et al. Structural, magnetic, and electron transport studies on nanocrystalline layered manganite La1.2Ba1.8Mn2O7 system  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 7 (3): 965-969 MAR 2007
26. Chakraborti D, Narayan J, Prater JT Room temperature ferromagnetism in Zn1-xCuxO thin films  APPLIED PHYSICS LETTERS 90 (6): Art. No. 062504 FEB 5 2007
27.  Porter HL, Muth JF, Narayan J, et al. Photoluminescence study of ZnO films codoped with nitrogen and tellurium  J. Appl. Phys. 100 (12): Art. No. 123102 DEC 15 2006
28. Conrad H, Ramachandran S, Jung K, et al. Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy AA6022 processed with an electric field  JOURNAL OF MATERIALS SCIENCE 41 (22): 7555-7561 NOV 2006
29. Narayan J, Bhosle VM Phase transition and critical issues in structure-property correlations of vanadium oxide  J. Appl. Phys. 100 (10): Art. No. 103524 NOV 15 2006
30.  Zhou H, Narayan J  Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface  JOURNAL OF NANOPARTICLE RES 8 (5): 595-600 OCT 2006
31.  Bhosle V, Narayan J Microstructure and electrical property correlations in Ga : ZnO transparent conducting thin films  JOURNAL OF APPL PHYS 100 (9): 093519 NOV 1 2006
32. Ramachandran S, Jung K, Narayan J, et al. Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally aged Al-Mg-Si alloy AA6022  MATERIALS SCIENCE AND ENGINEERING A 435: 693-697 NOV 5 2006
33. Narayan J, Bhosle V, Tiwari A, et al. Methods for processing tantalum films of controlled microstructures and properties JOURNAL OF VAC SCI & TECH A 24 (5): 1948 ( 2006 ).
34. Trichy GR, Narayan J, Zhou H L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition  APPLIED PHYSICS LETTERS 89 (13): 132502 SEP 25 2006
35. Bhosle V, Tiwari A, Narayan J Electrical properties of transparent and conducting Ga doped ZnO  JOURNAL OF APPLIED PHYSICS 100 (3): Art. No. 033713 AUG 1 2006
36. Narayan J  Critical size for defects in nanostructured materials  JOURNAL OF APPLIED PHYSICS 100 (3): Art. No. 034309 AUG 1 2006
37. Ramachandran S, Narayan J, Prater JT Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors  APPLIED PHYSICS LETTERS 88 (24): 242503 JUN 12 2006
38. Ramachandran S, Chugh A, Tiwari A, et al.Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001) JOURNAL CRYS GROWTH 291, 212 ( 2006 )
39. Chugh A, Ramachandran S, Tiwari A, et al. Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) JOURNAL OF ELEC MAT 35 (5): 840-845 (2006)
40. Prater JT, Ramachandran S, Tiwari A, et al. Co-doped ZnO dilute magnetic semiconductor  JOURNAL OF ELECTRONIC MATERIALS 35 (5): 852-856 MAY 2006
41. Tiwari A, Bhosle VM, Ramachandran S, et al. Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie temperature  APPLIED PHYSICS LETTERS 88 (14): Art. No. 142511 APR 3 2006
42. Tiwari A, Narayan J Growth and observation of low-field giant magnetoresistance in La0.7Sr0.3MnO3/ZnO superlattice structures  J NANOSCI  NANOTECH 6, 612 (2006)
43.  Narayan J, Pant P, Chugh A, et al. Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures  JOURNAL OF APPLIED PHYSICS 99, 054313 (2006)
44. Bhosle V, Tiwari A, Narayan J Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO  APPLIED PHYSICS LETTERS 88 (3): Art. No. 032106 JAN 16 2006
45. Ramachandran S, Tiwari A, Narayan J, et al. Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films  APPLIED PHYSICS LETTERS 87 (17): Art. No. 172502 OCT 24 2005
46. Conrad H, Narayan J, Jung K Grain size softening in nanocrystalline TiN  INT J OF REFRACTORY METALS & HARD MATERIALS 23 (4-6): 301-305 2005
47. Porter HL, Cai AL, Muth JF, et al.Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium  APPLIED PHYSICS LETTERS 86 (21), 211918 MAY 23 2005
48.  Bhosle V, Tiwari A, Narayan J Epitaxial growth and properties of MoOx(2 < x < 2.75) films  JOURNAL OF APPLIED PHYSICS 97 (8): Art. No. 083539 APR 15 2005
49.  Jin CM, Narayan R, Tiwari A, et al. Epitaxial growth of zinc oxide thin films on silicon  MATERIALS SCIENCE AND ENGINEERING B117 (3): 348-354 MAR 25 2005
50. Tiwari A, Jin C, Narayan J, et al. Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized insulator (vol 96, pg 3827, 2004)  JOURNAL OF APPLIED PHYSICS 97 (5): Art. No. 059902 MAR 1 2005
51. Damjanovic D, Bolla HK, Singh R, et al. Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate high-kappa gate stacks for the sub-90-nm CMOS regime  IEEE TRANS SEMICONDUCTOR MANUFACTURING 18, 55 (2005).
52. Narayan J  New frontiers in thin film growth and nanomaterials  METALLURGICAL AND MATERIALS TRANSACTIONS B 36 (1): 5-22 FEB 2005
53. Narayan J  New frontiers in thin film growth and nanomaterials  METALLURGICAL AND MATERIALS TRANSACTIONS A- 36 (2): 277-294 FEB 2005
54. Tiwari A, Narayan J, Sudhakar N, et al. Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001) SOLID STATE COM 132 (12): 863 (2004)
55. Ramachandran S, Tiwari A, Narayan J Origin of room-temperature ferromagnetism in cobalt-doped ZnO  JOURNAL ELEC MAT 33 (11): 1298-1302 NOV 2004
56. Narayan J, Tiwari A Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN matrices  J NANOSCI NANOTECHN 4 (7): 726-732 SEP 2004
57. Tiwari A, Jin C, Narayan J, et al. Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized insulator  JOURNAL OF APPLIED PHYSICS 96 (7): 3827-3830 OCT 1 2004
58.  Fakhruddin M, Singh R, Poole KF, et al. The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD  J ELECTROCHEM SOC 151 (8): G507-G511 2004
59.  Rawdanowicz TA, Narayan J Epitaxial GaN on Si(111): Process control of SiNx interlayer formation  APPLIED PHYSICS LETTERS 85 (1): 133-135 JUL 5 2004
60.  Ramachandran S, Tiwari A, Narayan J Zn0.9Co0.1O-based diluted magnetic semiconducting thin films  APPLIED PHYSICS LETTERS 84 (25): 5255-5257 JUN 21 2004
61. Kumar D, Yarmolenko S, Sarkar J, et al. Pulsed laser deposition assisted novel synthesis of self-assembled magnetic nanoparticles  COMPOSITES PART B 35 (2): 149-155 2004
62. Wang H, Gupta A, Tiwari A, et al. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections  J  ELECTRONIC MAT 33 (1): L5-L5 JAN 2004
63. Tiwari A, Chugh A, Jin C, et al. Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide   J NANOSCI NANOTECH 3, 368 (2003)
64. Wang H, Gupta A, Tiwari A, et al. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects  J OF ELECTRONIC MAT 32 (10): 994-999 OCT 2003
65. Wang H, Zhang X, Gupta A, et al. Growth and characteristics of TaN/TiN superlattice structures APPLIED PHYSICS LETTERS 83 (15): 3072-3074 OCT 13 2003
66. Zhou H, Kumar D, Kvit A, et al. Formation of self-assembled epitaxial nickel nanostructures  JOURNAL OF APPLIED PHYSICS 94 (8): 4841-4846 OCT 15 2003
67. Chugh A, Tiwari A, Kvit A, et al. A novel technique for making self-encapsulated and self-aligned copper films  MATERIALS SCIENCE AND ENGINEERING B103, 45 (2003)
68. Tiwari A, Jin C, Kumar D, et al. Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure  APPLIED PHYSICS LETTERS 83 (9): 1773-1775 SEP 1 2003
69. Zhu XK, Zhang X, Wang H, et al. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties  SCRIPTA MATERIALIA 49 (5): 429-433 SEP 2003
70.  Kumar D, Pennycook SJ, Narayan J, et al. Role of silver addition in the synthesis of high critical current density MgB2 bulk superconductors  SUPERCONDUCTOR SCIENCE & TECHNOLOGY 16 (4): 455-458 APR 2003
71. Gupta A, Wang H, Kvit A, et al. Effect of microstructure on diffusion of copper in TiN films  JOURNAL OF APPLIED PHYSICS 93 (9): 5210-5214 MAY 1 2003
72. Haverkamp J, Mayo RM, Bourham MA, et al. Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films  J APPL PHYS 93, 3627 (2003)
73. Tiwari A, Wang H, Kumar D, et al. Weak-localization effect in single crystal TaN(001) films  MODERN PHYSICS LETTERS B 16 (28-29): 1143-1149 DEC 20 2002
74. Zhang X, Wang H, Scattergood RO, et al. Evolution of microstructure and mechanical properties of in situ consolidated bulk ultra-fine-grained and nanocrystalline Zn prepared by ball milling  MATERIALS SCIENCE AND ENGINEERING A 344, 175( 2003).
75. Gilmore WM, Chattopadhyay S, Kvit A, et al. Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition  JOURNAL OF MATERIALS RESEARCH 18 (1): 111-114 JAN 2003
76. Narayan J, Larson BC Domain epitaxy: A unified paradigm for thin film growth  JOURNAL OF APPLIED PHYSICS 93 (1): 278-285 JAN 1 2003
77. Narayan J, Oktyabrsky S Formation of misfit dislocations in thin film heterostructures  JOURNAL OF APPLIED PHYSICS 92 (12): 7122-7127 DEC 15 2002
78. Kumar D, Pennycook SJ, Lupini A, et al.Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix  APPLIED PHYSICS LETTERS 8, 4204-4206 NOV 25 2002
79. Conrad H, Narayan J Mechanisms for grain size hardening and softening in Zn  ACTA MATERIALIA 50 (20): 5067-5078 DEC 3 2002
80. Narayan J, Wang H, Oh TH, et al. Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN  APPLIED PHYSICS LETTERS 81 (21): 3978-3980 NOV 18 2002
81. Zhang X, Wang H, Scattergood RO, et al. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn  ACTA MATERIALIA 50 (19): 4823-4830 NOV 14 2002
82. Tiwari A, Park M, Jin C, et al. Epitaxial growth of ZnO films on si(111)  JOURNAL OF MATERIALS RESEARCH 17 (10): 2480-2483 OCT 2002
83. Lopatin S, Pennycook SJ, Narayan J, et al. Z-contrast imaging of dislocation cores at the GaAs/Si interface APPLIED PHYSICS LETTERS 81 (15): 2728-2730 OCT 7 2002
84. Zhang X, Wang H, Scattergood RO, et al. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn  ACTA MATER 50, 3995 (2002)
85. Conrad H, Narayan J Mechanism for grain size softening in nanocrystalline Zn  APPLIED PHYSICS LETTERS 81 (12): 2241-2243 SEP 16 2002
86. Narayan J, Venkatesan RK, Kvit A Structure and properties of nanocrystalline zinc films  JOURNAL OF NANOPARTICLE RESEARCH 4 (3): 265-269 JUN 2002
87.  Zhang X, Wang H, Scattergood RO, et al. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test  ACTA MATER 50, 3527(2002)
88.  Wang H, Tiwari A, Zhang X, et al. Copper diffusion characteristics in single-crystal and polycrystalline TaN  APPLIED PHYSICS LETTERS 81 (8): 1453-1455 AUG 19 2002
89.  Zhang X, Wang H, Scattergood RO, et al. Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature  APPLIED PHYSICS LETTERS 81 (5): 823-825 (2002)
90.  Narayan J, Wang H, Ye JL, et al. Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes  APPLIED PHYSICS LETTERS 81 (5): 841-843 (2002)
91. Zhang X, Wang H, Kassem M, et al. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ consolidation of powders during mechanical attrition  SCRIPTA MATERIALIA 46 (9): 661-665 MAY 10 2002
92. Tiwari A, Jin C, Narayan J Strain-induced tuning of metal-insulator transition in NdNiO3  APPLIED PHYSICS LETTERS 80 (21): 4039-4041 MAY 27 2002
93. Tiwari A, Chug A, Jin C, et al. Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)  SOLID STATE COMMUNICATIONS 121 (12): 679-682 2002
94.  Kumar D, Zhou H, Nath TK, et al. Improved magnetic properties of self-assembled epitaxial nickel nanocrystallites in thin-film ceramic matrix  J MAT RES 17, 738-742 (2002)
95. Tiwari A, Rajeev KP, Narayan J Low temperature electrical transport in La1-xNdxNiO3-delta  SOLID STATE COMMUNICATIONS 121 (6-7): 357-361 2002
96.  Tiwari A, Jin C, Kvit A, et al. Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films  SOL STATE COMM 121 (6-7): 371-374 2002
97. Kumar D, Sankar J, Narayan J, et al. Low-temperature resistivity minima in colossal magnetoresistive La0.7Ca0.3MnO3 thin films  PHYSICAL REVIEW B 65,  094407 (2002)
98.  Wang H, Tiwari A, Kvit A, et al. Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer  APPLIED PHYSICS LETTERS 80 (13): 2323-2325 APR 1 2002
99.  Tiwari A, Narayan J, Jin C, et al. Growth of epitaxial NdNiO3 and integration with Si(100)  APPLIED PHYSICS LETTERS 80 (8): 1337-1339 FEB 25 2002
100. Narayan J, Sharma AK, Kvit A, et al. Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates  SOLID STATE COMMUNICATIONS 121 (1): 9-13 2002

Research Management

1. Group Leader at Oak Ridge National Laboratory, Lockheed-Martin Research Corporation (1972-84)
   
   Dr. Narayan as a Group Leader in the Solid State Division (now Materials Science and Technology Division) at Oak Ridge National Laboratory, managed Defects and Interfaces/Electron Microscopy programs which were funded by the Division of Materials Sciences, Office of Basic Energy Sciences of the U.S. Department of Energy.  He supervised research activities of five full-time research staff members, managed Microscope Laboratories, raised funds, interacted with DOE managers, and set new research directions for the Group.  The Group was highly productive and successful under his leadership, receiving DOE’s Outstanding Sustained Research Award in 1981, and unprecedented three IR-100 Awards.  These research awards are displayed at ORNL Library and Oak Ridge Museum of Science.
   
   
2. Director of Microelectronics Center of North Carolina, Research Triangle Park (1984-86)
   
   Dr. Narayan joined NCSU in 1984 as senior professor and director of research at MCNC, where he was responsible for setting up Research Laboratories (cost several million dollars) and for management of research programs related to advanced semiconductor devices at MCNC.  He interacted with the State of North Carolina and Federal funding agencies to raise funds, and recruited industrial companies to become affiliate members and support microelectronics research in North Carolina.
   
   
3. Director of Division of Materials Research, National Science Foundation (1990-92)
   
   Dr. Narayan was appointed Director of Division of Materials Research (Senior Executive Service Class) in October, 1990 under the Federal IPA (Intergovernmental Personnel Act) agreement from North Carolina State University.  The DMR is the largest division in the Foundation with research funding exceeding $250 M. Currently, the DMR is a lead division in funding nanoscience and nanotechnology related research. Dr. Narayan managed DMR which contained four SES (senior executive service) personnel, seventeen program directors and ten support staff members. The Division funded materials research involving the disciplines of engineering, physics, and chemistry.  In this capacity, he was ultimately responsible for funding decisions for the following program directorates: Materials Physics, Materials Theory, Solid State Chemistry, Metals, Ceramics, Electronic Materials, Polymers, National Instrumentation and Facilities, Materials Research Labs ( now Materials Research Science and Engineering Centers), Materials Research Groups, Materials Education Programs, Small Business Innovation Research, and Presidential (NSF) young Investigator and NSF CAREER Programs.  Dr. Narayan chaired the Presidential Initiative on Advanced Materials and Processing Program for the Foundation, where he worked with other federal funding agencies, the Office of Science and Technology Policy, and with the Office of Management and Budget to secure enhanced research funding for the next five years in the above areas.  During his tenure, he provided vision and leadership for all the NSF materials research and technology programs, for which he received NSF Distinguished Service Award.
   
   
4. Director of NSF Center for Advanced Materials and Smart Structures (1997-)
   
   This is a multidisciplinary center funded by NSF jointly to NC A&T and NC State University. Dr Narayan serves the Director at NCSU, which focuses on synthesis and processing of novel nanostructured materials and devices which can be integrated with silicon microelectronics for smart sensor applications. The integration requires epitaxy across the misfit scale, which has been facilitated by Professor Narayan’s invention of Domain Matching Epitaxy (J. Narayan, US Patent # 6,955, 985; October 18, 2005). The Center involves over a dozen faculty members at NC A&T (directed by Professor Jag Sankar) and NCSU form sciences and engineering disciplines.
   
   
5. Director of NSF Center for Atomic Resolution Electron Microscopy (1987-)   
   
   This Center was established as result of NSF grant (Dr. J. Narayan, PI) for two Akashi 002B high-resolution transmission electron microscopes, where one was configured in dedicated high-resolution mode and other one was in analytical mode. This facility was first of its kind to establish atomic structure and property correlations of new materials and devices. This facility was upgraded by another grant from NSF (Dr. Narayan, PI) to purchase a new generation of atomic resolution microscope to combine the high-resolution and analytical functions in one microscope (in JEOL 2010 with Gatan Image Filter and EELS attachments). This facility has operated successfully for the last two decades and made lasting scientific and technical impacts, including training and teaching of graduate students. 

Sponsored Research Projects

1. High Efficiency Organic Solar Cells with Novel Transparent Electrodes (ECCS-NSF)
2. Thin Film Epitaxy across the Misfit Scale ( DOE)
3. FRG NIRT: Science and Technology of Self-Assembled Magnetic and Superconducting Nano Arrays (DMR-NSF)
4. Radiation Tolerant Materials (DOE-EFRC with ORNL)
5. Ultrafast Phase Transition and Critical Issues in Structure-Property Correlations of Vanadium Oxide (DMR-NSF)
6. Novel Oxide Thin Film Heterostructures and Devices (ARO)
7. High Efficiency Nanostructured Light Emitting Diodes on Nonpolar Substrates (ECCS-NSF)
8. Nanoengineering Education Initiative (UNC-GA)
9. NSF Center for Advanced Materials and Smart Structures (NSF)
10. Studies on the atomic arrangements and bonding in doped (alloyed) and intercalated carbon nanotubes, graphite and composites (NCSU-IIT Roorkee Initiative, DST, India)